The title compound, [FeGa(CH)Cl(CO)], has an iron-gallium bond distance of 2.3028 (3) Å. The gallium atoms are connected by two bridging chlorine atoms, each gallium also has one terminal chlorine. The mol-ecule has an inversion center located between the gallium atoms. The cyclo-penta-dienyl ligand is disordered over two sites with an occupancy of 0.57 (2) for the major occupied site.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9635419 | PMC |
| http://dx.doi.org/10.1107/S241431462200832X | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
High-performance van der Waals stacked transistors based on ultrathin GaPS dielectrics.
Nanoscale
January 2025
School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi, 330031, People's Republic of China.
Article Synopsis
- Exploring high-κ gate dielectrics is vital for enhancing the performance of field-effect transistors (FETs).
- The study introduces few-layer gallium thiophosphate (GaPS) as a new semiconductor material with a dielectric constant of about 5.3, which can be easily obtained through mechanical exfoliation.
- FETs using GaPS as the top-gate dielectric and MoS as the channel material demonstrated impressive performance metrics, indicating that GaPS could be a promising option for advancing two-dimensional electronic devices.
Interface Modification by GaO Atomic Layers within Er-Doped GeO Nanofilms for Enhanced Electroluminescence and Operation Stability.
ACS Appl Mater Interfaces
January 2025
School of Materials Science and Engineering, Tianjin Key Lab for Rare Earth Materials and Applications, Nankai University, Tianjin 300350, China.
For silicon-based devices using dielectric oxides doped with rare earth ions, their electroluminescence (EL) performance relies on the sufficient carrier injection. In this work, the atomic GaO layers are inserted within the Er-doped GeO nanofilms fabricated by atomic layer deposition (ALD). Both Ga(CH) and Ga(CH) could realize the ALD growth of GaO onto the as-deposited GeO nanofilm with unaffected deposition rates.
View Article and Find Full Text PDFGrowth of Highly-Ordered-Crystalline Indium-Gallium-Oxide Thin-Film via Plasma-Enhanced ALD for High Performance Top-Gate Field-Effect Transistors.
Small Methods
December 2024
Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
This study introduces a novel method for achieving highly ordered-crystalline InGaO [0 ≤ x ≤ 0.6] thin films on Si substrates at 250 °C using plasma-enhanced atomic-layer-deposition (PEALD) with dual seed crystal layers (SCLs) of γ-AlO and ZnO. Field-effect transistors (FETs) with random polycrystalline InGaO channels (grown without SCLs) show a mobility (µFE) of 85.
View Article and Find Full Text PDFBreaking the Stability-Activity Trade-off of Oxygen Electrocatalyst by Gallium Bilateral-Regulation for High-Performance Zinc-Air Batteries.
Angew Chem Int Ed Engl
December 2024
Ordos Laboratory, Ordos, Inner Mongolia Autonomous Region 010020, China.
The rational design of metal oxide catalysts with enhanced oxygen reduction reaction (ORR) and oxygen evolution reaction (OER) performance is crucial for the practical application of aqueous rechargeable zinc-air batteries (a-r-ZABs). Precisely regulating the electronic environment of metal-oxygen (M-O) active species is critical yet challenging for improving their activity and stability toward OER and ORR. Herein, we propose an atomic-level bilateral regulation strategy by introducing atomically dispersed Ga for continuously tuning the electronic environment of Ru-O and Mn-O in the Ga/MnRuO catalyst.
View Article and Find Full Text PDFSynthesis and bioevaluation of a new Ga-labelled niraparib derivative that targets PARP-1 for tumour imaging.
Bioorg Chem
January 2025
Key Laboratory of Radiopharmaceuticals of the Ministry of Education, NMPA Key Laboratory for Research and Evaluation of Radiopharmaceuticals (National Medical Products Administration), College of Chemistry, Beijing Normal University, Beijing 100875, China. Electronic address:
Poly ADP-ribose polymerase (PARP) inhibitors prevent the repair of DNA single-strand breaks in cancer cells with abnormal homologous recombination, producing a synthetic lethal effect. Thus, PARP inhibitors have become clinically effective anticancer drugs. Labelling with radionuclides may extend the use of PARP inhibitors as tracers in nuclear medicine diagnostics, helping to stratify patients.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!