AI Article Synopsis
- The thickness of an undoped GaN layer affects current transport to a two-dimensional hole gas (2DHG) in GaN/AlGaN/GaN structures, with a noticeable internal potential barrier that varies with the layer's thickness.
- An observed constant barrier appears after 15 nm due to defect-related Fermi pinning, while a high nonideality factor indicates complexity in tunneling current behavior through the metal/p++GaN contact.
- The report achieves impressive metrics with a contact resistivity of 5.3 × 10 Ω cm and a hole mobility of about 15.65 cm/V s, making it a top performer for this type of metal stack in GaN-based structures.
Article Abstract
We report the influence of thickness of an undoped GaN (u-GaN) layer on current transport to a 2DHG through the metal/p++GaN contact in a GaN/AlGaN/GaN heterostructure. The current is dominated by an internal potential barrier of 0.2-0.27 eV at the p+ GaN/u-GaN, which increases with thickness from 5 to 15 nm and remains constant thereafter due to Fermi pinning by a defect at ∼0.6 eV from the top valence band. We also report a nonideality factor, , between 6 and 12, for the combined tunneling current through the p+GaN/u-GaN to the 2DHG. Our contact resistivity of 5.3 × 10 Ω cm and hole mobility, μ, of ∼15.65 cm/V s are the best-in-class for this metal stack on a GaN/AlGaN/GaN heterostructure, reported to date.
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Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9609307 | PMC |
| http://dx.doi.org/10.1021/acsaelm.2c01138 | DOI Listing |
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