AI Article Synopsis

  • As the thickness of a 3D topological insulator (TI) approaches the surface state penetration depth, quantum tunneling alters its electronic structure, potentially leading to a gapped spectrum and the emergence of topological edge states.
  • Transport experiments on the bulk insulating 3D TI, BiSbTeSe, reveal the presence of 2D topological states with a distinct quantum spin Hall (QSH) state, characterized by finite longitudinal conductance at ~2e/h when the Fermi level is in the surface gap.
  • Additionally, the transition from QSH to quantum Hall (QH) states under a magnetic field, along with a method for achieving 2D topological states through transverse electric fields, enhances the understanding of

Article Abstract

As the thickness of a three-dimensional (3D) topological insulator (TI) becomes comparable to the penetration depth of surface states, quantum tunneling between surfaces turns their gapless Dirac electronic structure into a gapped spectrum. Whether the surface hybridization gap can host topological edge states is still an open question. Herein, we provide transport evidence of 2D topological states in the quantum tunneling regime of a bulk insulating 3D TI BiSbTeSe. Different from its trivial insulating phase, this 2D topological state exhibits a finite longitudinal conductance at ~2e/h when the Fermi level is aligned within the surface gap, indicating an emergent quantum spin Hall (QSH) state. The transition from the QSH to quantum Hall (QH) state in a transverse magnetic field further supports the existence of this distinguished 2D topological phase. In addition, we demonstrate a second route to realize the 2D topological state via surface gap-closing and topological phase transition mechanism mediated by a transverse electric field. The experimental realization of the 2D topological phase in a 3D TI enriches its phase diagram and marks an important step toward functionalized topological quantum devices.

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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9613897PMC
http://dx.doi.org/10.1038/s41467-022-33643-9DOI Listing

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