AI Article Synopsis
- Atomic Layer Deposition (ALD) successfully creates Sb Te /GeTe superlattice films on both planar and vertical surfaces with a specific orientation due to the unique chemical interaction between the ALD precursor and the substrate.
- The superlattice film demonstrates a significantly lower reset current, about 1/7 of that of randomly oriented Ge Sb Te alloys, indicating improved performance.
- The switching process transforms the superlattice into a (111)-oriented face-centered-cubic structure, with induced compressive stress that aids in the movement of Ge atoms, leading to enhanced functionality in reset operations.
Article Abstract
Atomic layer deposition (ALD) of Sb Te /GeTe superlattice (SL) film on planar and vertical sidewall areas containing TiN metal and SiO insulator is demonstrated. The peculiar chemical affinity of the ALD precursor to the substrate surface and the 2D nature of the Sb Te enable the growth of an in situ crystallized SL film with a preferred orientation. The SL film shows a reduced reset current of ≈1/7 of the randomly oriented Ge Sb Te alloy. The reset switching is induced by the transition from the SL to the (111)-oriented face-centered-cubic (FCC) Ge Sb Te alloy and subsequent melt-quenching-free amorphization. The in-plane compressive stress, induced by the SL-to-FCC structural transition, enhances the electromigration of Ge along the [111] direction of FCC structure, which enables such a significant improvement. Set operation switches the amorphous to the (111)-oriented FCC structure.
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| http://dx.doi.org/10.1002/adma.202207143 | DOI Listing |
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