High-Responsivity Multiband and Polarization-Sensitive Photodetector Based on the TiS/MoS Heterojunction.

Two-dimensional (2D) material photodetectors have received considerable attention in optoelectronics as a result of their extraordinary properties, such as passivated surfaces, strong light-matter interactions, and broad spectral responses. However, single 2D material photodetectors still suffer from low responsivity, large dark current, and long response time as a result of their atomic-level thickness, large binding energy, and susceptibility to defects. Here, a transition metal trichalcogenide TiS with excellent photoelectric characteristics, including a direct bandgap (1.1 eV), high mobility, high air stability, and anisotropy, is selected to construct a type-II heterojunction with few-layer MoS, aiming to improve the performance of 2D photodetectors. An ultrahigh photoresponsivity of the TiS/MoS heterojunction of 48 666 A/W at 365 nm, 20 000 A/W at 625 nm, and 251 A/W at 850 nm is achieved under light-emitting diode illumination. The response time and dark current are 2 and 3 orders of magnitude lower than those of the current TiS photodetector with the highest photoresponsivity (2500 A/W), respectively. Furthermore, polarized four-wave mixing spectroscopy and polarized photocurrent measurements verify its polarization-sensitive characteristics. This work confirms the excellent potential of TiS/MoS heterojunctions for air-stable, high-performance, polarization-sensitive, and multiband photodetectors, and the excellent type-II TiS/MoS heterojunction system may accelerate the design and fabrication of other 2D functional devices.