Reward signals reflect the developmental tendency of reinforcement learning (RL) agents. Reward-modulated spike-time-dependent plasticity (R-STDP) is an efficient and concise information processing feature in RL. However, the physical construction of R-STDP normally demands complex circuit design engineering, resulting in large power consumption and large area. In this work, we studied the role of ferroelectric polarization in the modulation of carbon nanotube transistor channel polarity. Furthermore, we applied a modulating channel method to construct a 2T synaptic component by spin-coating technology. Based on the nonvolatility of ferroelectric polarization, the synaptic component constructed has the characteristics of reconfigurable polarity. One channel could be modulated to n-type and the other to p-type. One modulated channel was used to perform the STDP function when the reward signal arrived, and the other modulated channel was used to perform the anti-STDP function when the punishment signal arrived. Finally, R-STDP learning rules are implemented on hardware. This work provides a strategy for hardware construction of RL.
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http://dx.doi.org/10.1021/acs.jpclett.2c03007 | DOI Listing |
ACS Nano
January 2025
School of Electrical Engineering, Korea University, Seoul 02841, Korea.
Artificial synapses for neuromorphic computing have been increasingly highlighted, owing to their capacity to emulate brain activity. In particular, solid-state electrolyte-gated electrodes have garnered significant attention because they enable the simultaneous achievement of outstanding synaptic characteristics and mass productivity by adjusting proton migration. However, the inevitable interface traps restrict the protons at the channel-electrolyte interface, resulting in the deterioration of synaptic characteristics.
View Article and Find Full Text PDFNanotechnology
January 2025
Chinese Academy of Sciences, Institute of Microelectronics, No.3, Beitucheng West Road, Chaoyang District, beijing, 100029, CHINA.
In this letter, we investigated the impact of percolation transport mechanisms on ferroelectric field effect transistor (FeFET) multi-value storage with Kinetic Monte-Carlo (KMC) simulation considering aspect ratio and temperature dependencies. It is found that the portion of the ferroelectric polarization, which dominated the threshold voltage shift of the FeFET, increases when aspect ratio of device decreases. Moreover, randomness of percolation path formation and variations of equivalent conductance can be suppressed, indicating mitigation of device-to-device variations and enhancement of separation of individual states.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
January 2025
Southern University of Science and Technology, Materials Science and Engineering, CHINA.
The last decade has witnessed significant progress in organic electrochemical transistors (OECTs) due to their enormous potential applications in various bioelectronic devices, such as artificial synapses, biological interfaces, and biosensors. The remarkable advance achieved in this filed is highly powered by the development of novel organic mixed ionic/electronic conductors (OMIECs). Among these, π-conjugated polymers (CPs), which are widely used in various optoelectronics, are emerging as key channel materials for OECTs.
View Article and Find Full Text PDFACS Nano
December 2024
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China.
The demand for broadband, room-temperature infrared, and terahertz (THz) detectors is rapidly increasing owing to crucial applications in telecommunications, security screening, nondestructive testing, and medical diagnostics. Current photodetectors face significant challenges, including high intrinsic dark currents and the necessity for cryogenic cooling, which limit their effectiveness in detecting low-energy photons. Here, we introduce a high-performance ultrabroadband photodetector operating at room temperature based on two-dimensional black arsenene (b-As) nanosheets.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
Department of Electronic Engineering, Jeonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju 54896, Republic of Korea.
In this study, we investigate the origins of low-frequency noise (LFN) and 1/ noise in CuO thin-film transistors (TFTs). The static direct current (DC) - characterization demonstrates that the channel resistance () contributes significantly to mobility degradation in the TFTs, with channel thickness () controlled through the plasma-enhanced atomic layer deposition (PEALD) process. The 1/ noise followed the Hooge mobility fluctuation (HMF) model, and it was observed that both Coulomb and phonon scattering within the channel, which increased with a decrease in , contributed simultaneously.
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