AI Article Synopsis
- Hot electron detectors (HEDs) utilize plasmon resonance to improve sensitivity for mid-infrared (MIR) gas detection, overcoming the limitations of semiconductor materials.
- A new HED design using an Al/GaAs fishnet nanostructure was optimized for MIR sensing, showing significant enhancements in optical and electrical properties compared to traditional detectors.
- By varying the thickness of the GaAs layer, the detection wavelength can be adjusted, allowing for versatile multi-gas detection and highlighting the potential for more efficient gas detectors in engineering applications.
Article Abstract
Hot electron detectors (HEDs) based on plasmon resonance can circumvent a semiconductor's bandgap limitation and have high sensitivity, suitable for infrared gas detectors. Unfortunately, there are few literature reports on research in the mid-infrared (MIR) region. Herein, we design and optimize a HED based on Al/GaAs fishnet nanostructure for MIR sensing, and its optical-electrical properties are numerically studied. Surface plasmons not only achieve strong absorptance at emission wavelength but also greatly improve the photoelectric responsivity over a plane structure detector (∼42). By changing the thickness of the GaAs layer, the detection wavelength can also be actively adjusted, achieving a larger range of multi-gas detection. The effect of external voltage is also considered. This work highlights a potential engineering application value and offers a path toward more compact and efficient MIR gas detectors.
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| http://dx.doi.org/10.1364/AO.456247 | DOI Listing |
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