Voltage control of magnetic anisotropy (VCMA) in Si-compatible ferroelectric/ferromagnetic multiferroic thin films is promising to enable power-efficient and integrated magnetic memories. However, their VCMA effect is weak and is always smaller than that of the bulk counterparts. Here, we achieve a more substantial VCMA effect in thin films than in the bulk, benefiting from the large in-plane piezo-strain mediated magnetoelectric coupling under strong fields. Si-compatible ferroelectric Pb(Zr,Ti)O (PZT) thin films with large breakdown strength of up to 3.2 MV cm are fabricated to further construct multiferroic thin films. Since conventional methods fail to measure the VCMA effect under strong fields, we establish a micro-ferromagnetic resonance method based on micro-fabrication. An enhanced VCMA effect is demonstrated in PZT/CoFeB thin films, whose voltage-induced effective magnetic field () could experimentally reach 26.1 Oe, which is much stronger than that in bulk control samples "PZT ceramic/CoFeB" (2.6 Oe) and "PMN-PT single crystal/CoFeB" (18.5 Oe) as well as previous reports. Theoretically, the in thin films could be > 60 Oe near the breakdown strength, resulting from a giant in-plane piezo-strain < -0.3%, which is comparable to that of the best ferroelectric single crystals. Si-compatible multiferroic thin films with enhanced VCMA will be a useful platform for developing integrated magnetic and spintronic devices.
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