Nonlinear phenomena in physical systems can be used for brain-inspired computing with low energy consumption. Response from the dynamics of a topological spin structure called skyrmion is one of the candidates for such a neuromorphic computing. However, its ability has not been well explored experimentally. Here, we experimentally demonstrate neuromorphic computing using nonlinear response originating from magnetic field-induced dynamics of skyrmions. We designed a simple-structured skyrmion-based neuromorphic device and succeeded in handwritten digit recognition with the accuracy as large as 94.7% and waveform recognition. Notably, there exists a positive correlation between the recognition accuracy and the number of skyrmions in the devices. The large degrees of freedom of skyrmion systems, such as the position and the size, originate from the more complex nonlinear mapping, the larger output dimension, and, thus, high accuracy. Our results provide a guideline for developing energy-saving and high-performance skyrmion neuromorphic computing devices.
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http://dx.doi.org/10.1126/sciadv.abq5652 | DOI Listing |
Adv Sci (Weinh)
January 2025
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
Flexible memristors are promising candidates for multifunctional neuromorphic computing applications, overcoming the limitations of conventional computing devices. However, unpredictable switching behavior and poor mechanical stability in conventional memristors present significant challenges to achieving device reliability. Here, a reliable and flexible memristor using zirconium-oxo cluster (ZrOOH(OMc)) as the resistive switching layer is demonstrated.
View Article and Find Full Text PDFNano Lett
January 2025
Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.
Ferroelectric HfZrO (HZO) capacitors have been extensively explored for in-memory computing (IMC) applications due to their nonvolatility and back-end-of-line (BEOL) compatible process. Several IMC approaches using resistance and capacitance states in ferroelectric HZO have been proposed for vector-matrix multiplication (VMM), but previous approaches suffer from limited accuracy and reliability. In this work, we propose a promising approach centered on the remanent polarization (P) switching of binary ferroelectric HZO capacitor synapses.
View Article and Find Full Text PDFNanotechnology
January 2025
Kwangwoon University, 20 Kwangwoonro Nowon-Gu Seoul, Nowon-gu, 01897, Korea (the Republic of).
To implement a neuromorphic computing system capable of efficiently processing vast amounts of unstructured data, a significant number of synapse and neuron devices are needed, resulting in increased area demands. Therefore, we developed a nanoscale vertically structured synapse device that supports high-density integration. To realize this synapse device, the interface effects between the resistive switching layer and the electrode were investigated and utilized.
View Article and Find Full Text PDFSmall Methods
January 2025
Department of Chemistry, Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh, 208016, India.
Molecular electronics exhibiting resistive-switching memory features hold great promise for the next generation of digital technology. In this work, electrosynthesis of ruthenium polypyridyl nanoscale oligomeric films is demonstrated on an indium tin oxide (ITO) electrode followed by an ITO top contact deposition yielding large-scale (junction area = 0.7 × 0.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039, India.
The discovery of moiré physics in two-dimensional (2D) materials has opened new avenues for exploring unique physical and chemical properties induced by intralayer/interlayer interactions. This study reports the experimental observation of moiré patterns in 2D bismuth oxyselenide (BiOSe) nanosheets grown through one-pot chemical reaction methods and a sonication-assisted layer separations technique. Our findings demonstrate that these moiré patterns result from the angular stacking of the nanosheets at various twist angles, leading to the formation of moiré superlattices (MSLs) with distinct periodicities.
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