This paper proposes a new 6T1C pixel circuit based on low-temperature polycrystalline oxide (LTPO) technology for portable active-matrix organic light-emitting diode (AMOLED) displays with variable refresh rates ranging from 1 to 120 Hz. The proposed circuit has a simple structure and is based on the design of sharing lines of switch-controlling signals. It also provides low-voltage driving and immunity to OLED degeneration issues. The calculation and analysis of programming time are discussed, and the optimal storage capacitor for the proposed circuit's high-speed driving is selected. The results of the simulation reveal that threshold voltage variations in driving thin-film transistors of ±0.33 V can be well sensed and compensated with a 1.8% average shift of OLED currents in high-frame-rate operation (120 Hz), while the maximum variation in OLED currents within all gray levels is only 3.56 nA in low-frame-rate operation (1 Hz). As a result, the proposed 6T1C pixel circuit is a good candidate for use in portable AMOLED displays.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9506124 | PMC |
| http://dx.doi.org/10.3390/mi13091505 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
A PFM-Based Calibration Method for Low-Power High-Linearity Digital Pixel.
Sensors (Basel)
January 2025
School of Integrated Circuits, Dalian University of Technology, Dalian 116000, China.
The nonlinearity problem of digital pixels restricts the reduction in power consumption at the pixel-level circuit. The main cause of nonlinearity is discussed in this article and low power consumption is attained by reducing the static current in capacitive transimpedance amplifiers (CTIAs) and comparators. Linearity was successfully improved through the use of an off-chip calibration method.
View Article and Find Full Text PDFPerovskite retinomorphic image sensor for embodied intelligent vision.
Sci Adv
January 2025
Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Retinomorphic systems that can see, recognize, and respond to real-time environmental information will extend the complexity and range of tasks that an exoskeleton robot can perform to better assist physically disabled people. However, the lack of ultrasensitive, reconfigurable, and large-scale integratable retinomorphic devices and advanced edge-processing algorithms makes it difficult to realize retinomorphic hardware. Here, we report the retinomorphic hardware prototype with a 4096-pixel perovskite image sensor array as core module to endow embodied intelligent vision functionalities.
View Article and Find Full Text PDF1.6-Inch Transparent Micro-Display with Pixel Circuit Integrated microLED Chip Array by Misalignment-Free Transfer.
Adv Mater
January 2025
School of Electronic Engineering, Soongsil University, Seoul, 06938, South Korea.
Recent advances in mass transfer technology are expected to bring next-generation micro light-emitting diodes (µLED) displays into reality, although reliable integration of the active-matrix backplane with the transferred µLEDs remains as a challenge. Here, the µLED display technology is innovated by demonstrating pixel circuit-integrated micro-LEDs (PIMLEDs) and integrating them onto a transparent glass substrate. The PIMLED comprises of low-temperature poly-silicon transistors and GaN µLED.
View Article and Find Full Text PDFHalide Perovskite Photodiode Integrated CMOS Imager.
ACS Nano
December 2024
Interuniversity Microelectronics Center (imec), Leuven 3001, Belgium.
Article Synopsis
- Thin film photodiodes (TFPD), especially those made from halide perovskites, offer excellent optoelectronic properties, such as high absorption and fast charge transport, making them superior to other thin-film options.
- The study showcases how integrating perovskite photodiodes with silicon read-out integrated circuits (ROIC) enables high-resolution 2D imaging and facilitates 3D imaging through advanced techniques like time-of-flight sensing.
- This development presents a major advancement in TFPD technology, with potential applications in areas such as automotive systems, augmented reality (AR), and virtual reality (VR).
A Study on the Timing Sensitivity of the Transient Dose Rate Effect on Complementary Metal-Oxide-Semiconductor Image Sensor Readout Circuits.
Sensors (Basel)
November 2024
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institution of Nuclear Technology, Xi'an 710024, China.
Complementary Metal-Oxide-Semiconductor (CMOS) image sensors (CISs), known for their high integration, low cost, and superior performance, have found widespread applications in satellite and space exploration. However, the readout circuits of pixel arrays are vulnerable to functional failures in complex or intense radiation environments, particularly due to transient γ radiation. Using Technology Computer-Aided Design (TCAD) device simulations and Simulation Program with Integrated Circuit Emphasis (SPICE) circuit simulations, combined with a double-exponential current source fault injection method, this study investigates the transient dose rate effect (TDRE) on a typical readout circuit of CISs.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!