AI Article Synopsis
- The paper presents a new device design using a Ni/SiN/BN/p-Si structure, which shows improved ON/OFF ratio, stability, and low power consumption compared to simpler designs.
- It explains the device's switching behavior through the trapping and de-trapping of charges related to vacancies in the material.
- The study also explores how increased nonlinearity and rectification in the bilayer device can enhance performance in data storage applications like cross-point arrays, along with theoretical insights into charge behavior at the interface impacting the device's characteristics.
Article Abstract
In this paper, we demonstrate a device using a Ni/SiN/BN/p-Si structure with improved performance in terms of a good ON/OFF ratio, excellent stability, and low power consumption when compared with single-layer Ni/SiN/p-Si and Ni/BN/p-Si devices. Its switching mechanism can be explained by trapping and de-trapping via nitride-related vacancies. We also reveal how higher nonlinearity and rectification ratio in a bilayer device is beneficial for enlarging the read margin in a cross-point array structure. In addition, we conduct a theoretical investigation for the interface charge accumulation/depletion in the SiN/BN layers that are responsible for defect creation at the interface and how this accounts for the improved switching characteristics.
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|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9500867 | PMC |
| http://dx.doi.org/10.3390/mi13091498 | DOI Listing |
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