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Different application domains impose diverse and often conflicting requirements on the optoelectronic performance of metal oxide semiconductor (MOS) thin-film transistors (TFTs). These varying demands present substantial challenges in the selection of TFT materials and the optimization of device performance. This study begins by examining three primary application areas for TFTs: display drivers, photodetectors, and optoelectronic synapses.

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Designing efficient Ruthenium-based catalysts as practical anodes is of critical importance in proton exchange membrane water electrolysis. Here, we develop a self-assembly technique to synthesize 1 nm-thick rutile-structured high-entropy oxides (RuIrFeCoCrO) from naked metal ions assembly and oxidation at air-molten salt interface. The RuIrFeCoCrO requires an overpotential of 185 mV at 10 m A cm and maintains the high activity for over 1000 h in an acidic electrolyte via the adsorption evolution mechanism.

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The global asphalt production growth rate exceeded 10% in the past decade, and over 90% of the world's road surfaces are generated from asphalt materials. Therefore, the issue of asphalt aging has been widely researched. In this study, the aging of asphalt thin films under various natural conditions was studied to prevent the distortion of indoor simulated aging and to prevent the extraction of asphalt samples from road surfaces from impacting the aged asphalt.

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Miniaturization of next-generation active neural implants requires novel micro-packaging solutions that can maintain their long-term coating performance in the body. This work presents two thin-film coatings and evaluates their biostability and in vivo performance over a 7-month animal study. To evaluate the coatings on representative surfaces, two silicon microchips with different surface microtopography are used.

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Van der Waals (vdW) contact has been widely regarded as one of the most potential strategies for exploiting low-resistance metal-semiconductor junctions (MSJs) based on atomically thin transition-metal dichalcogenides (TMDs), but this method is still not efficient due to weak metal-TMD interfacial interactions. Therefore, an understanding of interfacial interactions between metals and TMDs is essential for achieving low-resistance contacts with weak Fermi level pinning (FLP). Herein, we report how the interfacial interactions between metals and TMDs affect the electrical contacts by considering more than 90 MSJs consisting of a semiconducting TMD channel and different types of metal electrodes, including bulk metals, MXenes, and metallic TMDs.

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