The integration of transition metal dichalcogenide (TMDC) layers on nanostructures has attracted growing attention as a means to improve the physical properties of the ultrathin TMDC materials. In this work, the influence of SiO nanopillars (NPs) with a height of 50 nm on the optical characteristics of MoS layers is investigated. Using a metal organic chemical vapor deposition technique, a few layers of MoS were conformally grown on the NP-patterned SiO/Si substrates without notable strain. The photoluminescence and Raman intensities of the MoS layers on the SiO NPs were larger than those observed from a flat SiO surface. For 100 nm-SiO/Si wafers, the 50 nm-NP patterning enabled improved absorption in the MoS layers over the whole visible wavelength range. Optical simulations showed that a strong electric-field could be formed at the NP surface, which led to the enhanced absorption in the MoS layers. These results suggest a versatile strategy to realize high-efficiency TMDC-based optoelectronic devices.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9419769 | PMC |
| http://dx.doi.org/10.1039/d0na00905a | DOI Listing |
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