A phototransistor based on a hybrid of graphene and BP nanosheets with a facile fabrication method and remarkable performance is presented. Unlike previously reported single BP flake-based devices, this phototransistor employs diverse BP nanosheets with different sizes and layer numbers. The wet transfer process of graphene is exploited to integrate the liquid-exfoliated BP nanosheets into the device smoothly. Due to the diversity of BP nanosheets, the device demonstrates a broadband photo-response in the spectrum from 360 nm to 785 nm. The photo-response mechanism is revealed to be the photogating effect caused by the discrete BP nanosheets adsorbed on graphene. The phototransistor has a responsivity of 7.7 × 10 A W in the near-UV region with a wide conductive channel of 200 μm. Moreover, the simplified wet transfer process of graphene leaves a self-encapsulated layer of PMMA on the as-prepared device, inducing a good atmospheric stability in the device. This report provides a valid, implantable, and facile strategy to apply BP nanosheets in a broadband, high-performing and air-stable photodetector.
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http://dx.doi.org/10.1039/c9na00528e | DOI Listing |
Angew Chem Int Ed Engl
January 2025
Nankai University, College of Chemistry, Weijin Road 94, 300071, Tianjin, CHINA.
As an emerging class of optoelectronic materials, multi-resonance (MR) 1,4-BN-heteroarenes have been extensively employed as narrowband electroluminescence materials, whereas their absorption feature has largely been neglected. Here we construct the first MR-molecule-based phototransistor for filterless narrowband photodetectors (NBPDs) by anchoring narrowband absorption MR molecules on the high-mobility semiconductor indium-zinc-oxide (IZO) film. The resulting device exhibits high-performance photodetection with a small full-width at half-maximum (FWHM) of 33 nm, which represents a new record for NBPDs based on intrinsic narrowband absorbing materials.
View Article and Find Full Text PDFMicromachines (Basel)
December 2024
Northwest Institute of Nuclear Technology, Xi'an 710024, China.
In this paper, a silicon carbide (SiC) phototransistor based on an open-base structure was fabricated and used as a radiation detector. In contrast to the exposed and thin sensitive region of traditional photo detectors, the sensitive region of the radiation detector was much thicker (30 μm), ensuring the high energy deposition of radiation particles. The response properties of the fabricated SiC npn radiation detector were characterized by high-energy X-ray illumination with a maximum X-ray photon energy of 30 keV.
View Article and Find Full Text PDFNat Nanotechnol
January 2025
Department of Chemistry, University of Oxford, Oxford, UK.
Nanoscale photoswitchable proteins could facilitate precise spatiotemporal control of transmembrane communication and support studies in synthetic biology, neuroscience and bioelectronics. Here, through covalent modification of the α-haemolysin protein pore with arylazopyrazole photoswitches, we produced 'photopores' that transition between iontronic resistor and diode modes in response to irradiation at orthogonal wavelengths. In the diode mode, a low-leak OFF-state nanopore exhibits a reversible increase in unitary conductance of more than 20-fold upon irradiation at 365 nm.
View Article and Find Full Text PDFNanoscale
January 2025
State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 710049, China.
Two-dimensional (2D) organic-inorganic halide perovskites are promising sensitive materials for optoelectronic applications due to their strong light-matter interactions, layered structure, long carrier lifetime and diffusion length. However, a high gate bias is indispensable for perovskite-based phototransistors to optimize detection performances, since ion migration seriously screens the gate electric field and the deposition process introduces intrinsic defects, which induces severe leakages and large power dissipation. In this work, an ultrasensitive phototransistor based on the (PEA)SnI perovskite and the Al:HfO ferroelectric layer is meticulously studied, working without an external gate voltage.
View Article and Find Full Text PDFMacromol Rapid Commun
January 2025
State Key Laboratory of Applied Organic Chemistry (SKLAOC), Key Laboratory of Special Function Materials and Structure Design, College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou, 730000, China.
Conjugated polymers have attracted extensive attention as semiconducting materials in wearable and flexible electronics. In this study, we utilize atom-economical Knoevenagel reaction to construct two conjugated polymers, PTDPP-CNTT and PFDPP-CNTT, based on dialdehyde-thiophene/furan-flanked diketopyrrolopyrrole (DPP) and 2,2'-(thieno[3,2-b]thiophene-2,5-diyl)diacetonitrile (CNTT). The resulting polymers exhibited suitable highest occupied molecular orbital/lowest unoccupied molecular orbital (HOMO/LUMO) energy levels, small bandgaps, and broad UV-vis-NIR absorptions (≈400-1000 nm), endowing them with photothermal and balanced ambipolar semiconducting properties with hole and electron mobilities over 10 cmVs.
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