A decade ago, a statistics-based method was introduced to count the number of atoms from annular dark-field scanning transmission electron microscopy (ADF STEM) images. In the past years, this method was successfully applied to nanocrystals of arbitrary shape, size, and composition (and its high accuracy and precision has been demonstrated). However, the counting results obtained from this statistical framework are so far presented without a visualization of the actual uncertainty about this estimate. In this paper, we present three approaches that can be used to represent counting results together with their statistical error, and discuss which approach is most suited for further use based on simulations and an experimental ADF STEM image.
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Article Synopsis
- * Aberration-corrected scanning transmission electron microscopy (STEM) has advanced rapidly and is used for detailed atomic-scale characterization, but it faces challenges in analyzing signals from individual atoms.
- * This review highlights low-voltage STEM methods with single-atom sensitivity, showcasing carbon-based nanomaterials for their unique stability and properties, while also summarizing recent advancements and future prospects in this field.
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