Scaling of monolayer transition metal dichalcogenide (TMD) field-effect transistors (FETs) is an important step toward evaluating the application space of TMD materials. Although some work on ultrashort channel monolayer (ML) TMD FETs has been published, there exist no comprehensive studies that assess their performance in a statistically relevant manner, providing critical insights into the impact of the device geometry. Part of the reason for the absence of such a study is the substantial variability of TMD devices when processes are not carefully controlled. In this work, we show a statistical study of ultrashort channel double-gated ML WS FETs exhibiting excellent device performance and limited device-to-device variations. From a detailed analysis of cross-sectional scanning transmission electron microscopy (STEM) images and careful technology computer aided design (TCAD) simulations, we evaluated, in particular, an unexpected deterioration of the subthreshold characteristics for our shortest devices. Two potential candidates for the observed behavior were identified, i.e., buckling of the TMD on the substrate and loss of gate control due to the source geometry and the high- dielectric between the metal gate and the metal source electrode.
A wavelength demodulation method for ultra-short fiber Bragg grating (US-FBG) sensors based on an arrayed waveguide grating (AWG) and a convex optimization algorithm is proposed and demonstrated. Instead of measuring the output power ratio of the two adjacent AWG channels as previously done, in this work the wavelength demodulation is realized by reconstructing the US-FBG spectrum. The principle of spectral reconstruction involves using an AWG to sample the spectral information of US-FBG and constructing underdetermined matrix equations with the obtained prior information on transmission responses and the detected output power from multiple AWG channels.
In two-dimensional (2D) nanomaterial electronics, vertical field-effect transistors (VFETs), where charges flow perpendicular to the channel materials, hold promise due to the ease of forming ultrashort channel lengths by utilizing the thinness of 2D materials. However, the poor performance of p-type VFET arises from the lack of a gate-field-penetrating electrode with suitable work functions, which is essential for VFET operation. This motivated us to replace graphene (work function of ∼4.
Key Lab of advanced optoelectronic quantum architecture and measurement (Ministry of Education), Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, and School of Physics, Beijing Institute of Technology, Beijing, 100081, China.
Ordered intermetallic Platinum-Zinc (PtZn) shows promise for hydrogen evolution reaction (HER) but struggles with activity due to zinc's H-repulsion properties.
Researchers created I-PtZn@NPC nanoparticles using a confinement-high-temperature pyrolysis strategy, which introduces local disorder that enhances HER performance by allowing for faster hydrogen migration.
The modified material demonstrated impressive results, with a very low overpotential compared to commercial platinum catalysts, and successfully operated in a proton exchange membrane electrolyzer for extended periods.
As the key component in on-chip mode-division multiplexing systems, a compact silicon photonic-lantern mode (de)multiplexer is proposed and demonstrated using the shallow-etched tilt slot waveguide. The proposed six-mode (de)multiplexer is designed as a constant coupling length of 11.7 µm for each mode conversion and eliminates the adiabatic transition tapers for cascaded asymmetric directional couplers, which have an ultra-short total length of 69 µm.
Department of Anesthesiology, Jefferson Surgical Center Endoscopy, Sidney Kimmel Medical College, Jefferson Health, 111 S 11th Street, #7132, Philadelphia, PA, 19107, USA.
GABA (γ-aminobutyric acid) receptors are constituents of many inhibitory synapses within the central nervous system. They are formed by 5 subunits out of 19 various subunits: α1-6, β1-3, γ1-3, δ, ε, θ, π, and ρ1-3. Two main subtypes of GABA receptors have been identified, namely GABAA and GABAB.
