Enhancing the Efficiency of Perovskite Solar Cells through Interface Engineering with MoS Quantum Dots.

Nanomaterials (Basel)

Key Laboratory of Automobile Materials MOE, School of Materials Science & Engineering, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Electron Microscopy Center, Jilin University, Changchun 130012, China.

Published: September 2022

AI Article Synopsis

  • - The efficiency of perovskite solar cells (PSCs) is largely influenced by the quality of their interface, especially the buried bottom surface of the perovskite film.
  • - Using MoS quantum dots for passivation improves the crystallinity of perovskite films, leading to better light emission properties and longer lifetimes for emitted light.
  • - The incorporation of MoS quantum dots not only aids in hole collection but also reduces electron leakage, resulting in a significant increase in power conversion efficiency from 17.87% to 19.95%.

Article Abstract

The interface of perovskite solar cells (PSCs) determines their power conversion efficiency (PCE). Here, the buried bottom surface of a perovskite film is efficiently passivated by using MoS quantum dots. The perovskite films prepared on top of MoS-assisted substrates show enhanced crystallinity, as evidenced by improved photoluminescence and a prolonged emission lifetime. MoS quantum dots with a large bandgap of 2.68 eV not only facilitate hole collection but also prevent the photogenerated electrons from flowing to the hole transport layer. Overall promotion leads to decreased trap density and an enhanced built-in electric field, thus increasing the device PCE from 17.87% to 19.95%.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9460046PMC
http://dx.doi.org/10.3390/nano12173079DOI Listing

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