In recent years, two-dimensional molybdenum disulfide (MoS) has attracted extensive attention in the application field of next-generation electronics. Compared with single-layer MoS, bilayer MoS has higher carrier mobility and has more promising applications for future novel electronic devices. Nevertheless, the large-scale low-cost synthesis of high-quality bilayer MoS still has much room for exploration, requiring further research. In this study, bilayer MoS crystals grown on soda-lime glass substrate by sodium chloride (NaCl)-assisted chemical vapor deposition (CVD) were reported, the growth mechanism of NaCl in CVD of bilayer MoS was analyzed, and the effects of molybdenum trioxide (Mo) mass and growth pressure on the growth of bilayer MoS under the assistance of NaCl were further explored. Through characterization with an optical microscope, atomic force microscopy and Raman analyzer, the domain size of bilayer MoS prepared by NaCl-assisted CVD was shown to reach 214 μm, which is a 4.2X improvement of the domain size of bilayer MoS prepared without NaCl-assisted CVD. Moreover, the bilayer structure accounted for about 85%, which is a 2.1X improvement of bilayer MoS prepared without NaCl-assisted CVD. This study provides a meaningful method for the growth of high-quality bilayer MoS, and promotes the large-scale and low-cost applications of CVD MoS.
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http://dx.doi.org/10.3390/nano12172913 | DOI Listing |
Nano Lett
January 2025
Department of Physics and Astronomy, University of California Riverside, Riverside, California 92521, United States.
Transition metal dichalcogenides (TMDs) with rhombohedral (3R) stacking order are excellent platforms to realize multiferroelectricity. In this work, we demonstrate the electrical switching of ferroelectric orders in bilayer, trilayer, and tetralayer 3R-MoS dual-gate devices by examining their reflection and photoluminescence (PL) responses under sweeping out-of-plane electric fields. We observe sharp shifts in excitonic spectra at different critical fields with pronounced hysteresis.
View Article and Find Full Text PDFJ Phys Condens Matter
January 2025
Dep. Fisica, Universidade Federal de Minas Gerais, ICEX, Av. Antonio Carlos 6627, Belo Horizonte, MG, 31270-901, BRAZIL.
Nowadays, experimental research advances in condensed matter physics are deep-rooted in the development and manipulation of nanomaterials, making it essential to explore the fundamental properties of materials that are candidates for nanotechnology. In this work, we study the dependence of the molybdenum disulfide (MoS2) Raman modes on the sample temperature and on the excitation laser power. From the correlation between these two sets of measurements, we determine the planar thermal conductivity of MoSmonolayers, bilayers, trilayers, four layers, seven layers, and eight layers.
View Article and Find Full Text PDFSmall
January 2025
Key Laboratory of Multiscale Spin Physics, Ministry of Education, School of Physics and Astronomy, Beijing Normal University, Beijing, 100875, P. R. China.
The etch-engineering is a feasible avenue to tailor the layer number and morphology of 2D layered materials during the chemical vapor deposition (CVD) growth. However, less reports strengthen the etch-engineering used in the fabrication of high-quality transition metal dichalcogenide (TMD) materials with tunable layers and desirable morphologies to improve their prominent performance in electronic and optoelectronic devices. Here, an etching-and-growth coexistence method is reported to directly synthesize high-quality, high-symmetric MoS bilayers with versatile morphologies via CVD.
View Article and Find Full Text PDFNano Lett
January 2025
Beijing Computational Science Research Center, Beijing 100193, China.
Artificial honeycomb lattices are essential for understanding exotic quantum phenomena arising from the interplay between Dirac physics and electron correlation. This work shows that the top two moiré valence bands in rhombohedral-stacked twisted MoS bilayers (tb-MoS) form a honeycomb lattice with massless Dirac fermions. The hopping and Coulomb interaction parameters are explicitly determined based on large-scale ab initio calculations.
View Article and Find Full Text PDFSci Rep
January 2025
Department of Mechanical Engineering, Stevens Institute of Technology, Hoboken, NJ, 07030, USA.
Two-Dimensional transition metal dichalcogenides have been the subject of extensive attention thanks to their unique properties and atomically thin structure. Because of its unprecedented room-temperature magnetic properties, iron-doped MoS (Fe:MoS) is considered the next-generation quantum and magnetic material. It is essential to understand Fe:MoS's thermal behavior since temperature and thermal load/activation are crucial for their magnetic properties and the current nano and quantum devices have been severely limited by thermal management.
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