Higher contact resistance not only increases power consumption and temperature rise but also causes undesirable interconnectivity between electrode materials, which further influences the electrical lifespan and reliability of switching devices. However, relevant studies on the relationship between contact resistance and load force, and on the reduction of contact resistance by controlling the micro-structure of rough surfaces, especially for electrode materials with larger (root mean square) values, are very limited. In this study, the contact resistance calculation method, based on classical Holm theory in combination with the elastic and plastic deformation, was reviewed. Then, typical curves of measured contact resistance and load force were analyzed and compared with the calculation results for smooth surfaces. Furthermore, experimental results for electrodes with bright and matt surfaces were compared. It was found that the average contact resistance of samples with matt surfaces was 0.162 mΩ for a load force of 5 N, which decreased by 18.52% compared to that of the bright surface. The standard deviation of the contact resistance greatly decreased to 0.008 mΩ for samples with matt surfaces, which indicated that the matt electrode surface could effectively produce low and stable contact resistance. In addition, the influences of the numbers and sizes of contact -spots on the relationship between contact resistance and load force were investigated. It was found that denser asperities with smaller curvature radii for the matt surface were beneficial for lower contact resistance, even for the electrode material with larger values. Finally, an empirical model of the contact resistance with error bands based on the experimental results was established and verified.
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http://dx.doi.org/10.3390/ma15165667 | DOI Listing |
ACS Appl Mater Interfaces
January 2025
CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi 110012, India.
In the past decade, significant efforts have been made to develop efficient half-Heusler (HH) based thermoelectric (TE) materials. However, their practical applications remain limited due to various challenges occurring during the fabrication of TE devices, particularly the development of stable contacts with low interfacial resistance. In this study, we have made an effort to explore a stable contact material with low interfacial resistance for an n-type TiCoSb-based TE material, specifically TiNbCoSbBi as a proof of concept, using a straightforward facile synthesis route of spark plasma sintering.
View Article and Find Full Text PDFLangmuir
January 2025
Henan Province Engineering Technology Research Center of MEMS Manufacturing and Applications, School of Mechanics and Safety Engineering, Zhengzhou University, Zhengzhou 450001, China.
The rapid development of wearable technology, flexible electronics, and human-machine interaction has brought about revolutionary changes to the fields of motion analysis and physiological monitoring. Sensors for detecting human motion and physiological signals have become a hot topic of current research. Inspired by the muscle fiber structure, this paper proposed a highly stable strain sensor that was composed of stretchable Spandex fibers (SPF), multiwalled carbon nanotubes (MWCNTs), and silicone rubber (Ecoflex).
View Article and Find Full Text PDFNat Commun
January 2025
School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, QLD, Australia.
Te-free thermoelectrics have garnered significant interest due to their immense thermoelectric potential and low cost. However, most Te-free thermoelectrics have relatively low performance because of the strong electrical and thermal transport conflicts and unsatisfactory compatibility of interfaces between device materials. Here, we develop lattice defect engineering through Cu doping to realize a record-high figure of merit of ~1.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
School of Information Science and Technology, Fudan University, Shanghai 200433, China.
To date, various kinds of memristors have been proposed as artificial neurons and synapses for neuromorphic computing to overcome the so-called von Neumann bottleneck in conventional computing architectures. However, related working principles are mostly ascribed to randomly distributed conductive filaments or traps, which usually lead to high stochasticity and poor uniformity. In this work, a heterostructure with a two-dimensional WS monolayer and a ferroelectric PZT film were demonstrated for memristors and artificial synapses, triggered by in-plane ferroelectric polarization.
View Article and Find Full Text PDFNanotechnology
January 2025
Anhui Agricultural University, Hefei, 230036, P. R. China, Hefei, 230036, CHINA.
Strain sensing fabrics are able to sense the deformation of the outside world, bringing more accurate and real-time monitoring and feedback to users. However, due to the lack of clear sensing mechanism for high sensitivity and high linearity carbon matrix composites, the preparation of high performance strain sensing fabric weaving is still a major challenge. Here, an elastic polyurethane(PU)-based conductive fabric(GCPU) with high sensitivity, high linearity and good hydrophobicity is prepared by a novel synergistic conductive network strategy.
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