Among emerging technologies developed to interface neuronal signaling, engineering electrodes at the nanoscale would yield more precise biodevices opening to progress in neural circuit investigations and to new therapeutic potential. Despite remarkable progress in miniature electronics for less invasive neurostimulation, most nano-enabled, optically triggered interfaces are demonstrated in cultured cells, which precludes the studies of natural neural circuits. We exploit here free-standing silicon-based nanoscale photodiodes to optically modulate single, identified neurons in mammalian spinal cord explants. With near-infrared light stimulation, we show that activating single excitatory or inhibitory neurons differently affects sensory circuits processing in the dorsal horn. We successfully functionalize nano-photodiodes to target single molecules, such as glutamate AMPA receptor subunits, thus enabling light activation of specific synaptic pathways. We conclude that nano-enabled neural interfaces can modulate selected sensory networks with low invasiveness. The use of nanoscale photodiodes can thus provide original perspective in linking neural activity to specific behavioral outcome.

Download full-text PDF

Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9374338PMC
http://dx.doi.org/10.1126/sciadv.abp9257DOI Listing

Publication Analysis

Top Keywords

nanoscale photodiodes
12
light activation
8
distributed interfacing
4
nanoscale
4
interfacing nanoscale
4
photodiodes enables
4
enables single-neuron
4
single-neuron light
4
activation sensory
4
sensory enhancement
4

Similar Publications

A butterfly-shaped acceptor with rigid skeleton and unique assembly enables both efficient organic photovoltaics and high-speed organic photodetectors.

Natl Sci Rev

January 2025

State Key Laboratory of Elemento-Organic Chemistry, Frontiers Science Center for New Organic Matter, The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, Renewable Energy Conversion and Storage Center (RECAST), Tianjin Key Laboratory of Functional Polymer Materials, Nankai University, Tianjin 300071, China.

It remains challenging to design efficient bifunctional semiconductor materials in organic photovoltaic and photodetector devices. Here, we report a butterfly-shaped molecule, named WD-6, which exhibits low energy disorder and small reorganization energy due to its enhanced molecular rigidity and unique assembly with strong intermolecular interaction. The binary photovoltaic device based on PM6:WD-6 achieved an efficiency of 18.

View Article and Find Full Text PDF

Short-wave infrared (SWIR) photodetectors (PDs) have a wide range of applications in the field of information and communication. Especially in recent years, with the increasing demand for consumer electronics, conventional semiconductor-based PDs alone are unable to cope with the ever-increasing market. Colloidal quantum dots (QDs) have attracted great interest due to their low fabrication cost, solution processability, and promising optoelectronic properties.

View Article and Find Full Text PDF

fabrication of self-filtered near-infrared TiCT/n-Si Schottky-barrier photodiodes for a continuous non-invasive photoplethysmographic system.

Nanoscale

January 2025

Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China.

Two-dimensional (2D) MXenes have emerged as promising candidates to serve as Schottky contact electrodes for the development of high-performance photodiodes owing to their extraordinary electronic properties. However, it remains a formidable challenge to fabricate a large-area, uniform MXene layer for practical device application. Here, we develop a facile route to produce a large-area TiCT layer by post-etching treatment of a pulsed laser-deposited TiAlC film, enabling the construction of a back-illuminated TiCT/n-Si Schottky-barrier photodiode.

View Article and Find Full Text PDF

High-Performance Gate-Voltage-Tunable Photodiodes Based on NbPdSe/WSe Mixed-Dimensional Heterojunctions.

ACS Appl Mater Interfaces

November 2024

Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China.

Article Synopsis
  • The development of a mixed-dimensional van der Waals heterojunction using 1D NbPdSe nanowires and 2D WSe nanosheets shows promise for advanced photodetectors due to its unique photoelectric properties and compatibility.
  • By adjusting the Fermi level with gate voltage, the heterojunction achieves tunable rectification characteristics, enhancing its performance.
  • Under 685 nm laser light, it exhibits impressive self-powered photodetection with a photoresponsivity of 1.45 A/W, a detectivity of 6.8 × 10^9 Jones, and a rapid response time, along with the capability to detect wavelengths from 255 to 1064 nm.
View Article and Find Full Text PDF

The resolution of Si complementary metal-oxide-semiconductor field-effect transistor (C-MOSFET) image sensors (CISs) has been intensively enhanced to follow the technological revolution of smartphones, AI devices, autonomous cars, robots, and drones, approaching the physical and material limits of a resolution increase in conventional Si CISs because of the low quantum efficiency (i.e., ~40%) and aperture ratio (i.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!