Perovskite stannate SrSnO (SSO) is attracting attention as ultraviolet transparent conducting oxides (UV TCOs) due to its ultrawide band gap and high conductivity. Here, we investigate in detail the thickness-dependent electrical, structural, and optical properties of sequentially strain-relaxed La-doped SrSnO (SLSO) epitaxial thin films. We find that the SLSO films grow as an orthorhombic phase with in the direction under the tensile strain. With the strain relaxation, as the films become thicker, vertical grain boundaries are created and the orthorhombic phase becomes reoriented to all three possible orientations. Simultaneously, the conductance starts to deviate from the linear behavior with increasing film thickness. Through the analysis of thickness fringes in optical transmittance, we found that a 120 nm thick nominally 4% La-doped SrSnO film has a figure of merit (φ = 2.65 × 10 Ω) at λ = 300 nm in the deep-UV region, which is the highest value among the well-known candidates for UV TCOs reported to date.
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http://dx.doi.org/10.1021/acsaelm.2c00581 | DOI Listing |
ACS Appl Mater Interfaces
August 2024
School of Physics, Sun Yat-sen University, Guangzhou 510275, China.
Broadband spectrum detectors exhibit great promise in fields such as multispectral imaging and optical communications. Despite significant progress, challenges like materials instability in such devices, complex manufacturing process, and high cost still hinder their further application. Here, we present a method that achieves broadband spectral detection by impurity-level in SrSnO.
View Article and Find Full Text PDFNanoscale
June 2023
School of Microelectronics, Fudan University, Shanghai 200433, China.
ACS Appl Electron Mater
July 2022
Institute of Applied Physics, Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea.
Perovskite stannate SrSnO (SSO) is attracting attention as ultraviolet transparent conducting oxides (UV TCOs) due to its ultrawide band gap and high conductivity. Here, we investigate in detail the thickness-dependent electrical, structural, and optical properties of sequentially strain-relaxed La-doped SrSnO (SLSO) epitaxial thin films. We find that the SLSO films grow as an orthorhombic phase with in the direction under the tensile strain.
View Article and Find Full Text PDFNano Lett
December 2021
Department of Chemical Engineering and Materials Science, University of Minnesota - Twin Cities, Minneapolis, Minnesota 55455, United States.
Hysteretic magnetoresistance (MR) is often used as a signature of ferromagnetism in conducting oxide films and heterostructures. Here, magnetotransport is investigated in a nonmagnetic La-doped SrSnO film. A 12 nm La:SrSnO/2 nm SrSnO/GdScO (110) film with insulating behavior exhibited a robust hysteresis loop in the MR at < 5 K accompanied by an anomaly at ∼±3 T at < 2.
View Article and Find Full Text PDFACS Appl Mater Interfaces
February 2019
Department of Chemical Engineering and Materials Science , University of Minnesota, Twin Cities , Minneapolis , Minnesota 55455 , United States.
We investigate the ion gel gating of wide bandgap oxide, La-doped SrSnO films grown using radical-based molecular beam epitaxy. An applied positive bias resulted in a reversible electrostatic control of sheet resistance over 3 orders of magnitude at low temperature driving sample from Mott variable range hopping to a weakly localized transport. Analysis of low temperature transport behavior revealed electron-electron interaction and weak localization effects to be the dominant scattering mechanisms.
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