Crystalline GaO (c-GaO) is a promising candidate for next-generation solar-blind photodetectors (SBPDs) but is suffering from high processing temperatures. Herein, seed-induced engineering is proposed via adopting Zn as an induced metal for crystallizing GaO, lowering the processing temperature by 200 °C. After annealing, the Zn/GaO consists of an inner GaO layer of a monoclinic crystalline phase, top ZnO crystals coming from Zn oxidation, and a thin corundum GaO layer between them, which implies a "seed-induced" crystallization mechanism besides the nonequilibrium chaotic state caused by the traditional electron transfer one. As a result, the tailored c-GaO thin-film transistor-type SBPD with enhanced packing density and finite oxygen deficiency demonstrates a satisfactory responsivity of 8.6 A/W and also an ultrahigh UVC/visible rejection ratio (/) of 2 × 10. The seed-induced engineering forecasts its potential application in crystalline GaO SBPDs under a relatively low processing temperature.
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