We report a local mapping photoresponse of WSe using a second-harmonic (2w) channel based on nondestructive electrostatic force microscopy (EFM). The 2w signals resulting from interaction between WSe and EFM tip are intrinsically related to the electrical conductivity of WSe. The photoresponse images and rise/decay time constants of WSe are obtained by local mapping 2w signals under illumination. We observe that the local photoresponse signals of WSe increase with the positive tip gate voltage while the WSe shows a p-type behavior in dark conditions We find that the reduced mobility of the photogenerated charge carriers resulting from the enhanced carrier scattering in the accumulation regime of WSe is responsible for the gate-dependent photoresponse behavior. Our results provide a deep understanding the intrinsic optoelectrical properties of WSe and contribute to the developments in the optoelectronic devices based on van der Waals layered materials.
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| http://dx.doi.org/10.1016/j.ultramic.2022.113590 | DOI Listing |
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