Micro-photoluminescence was observed while increasing the excitation power in a single GaAs quantum ring (QR) at 4 K. Fine structures at the energy levels of the ground ( = 1) and excited ( = 2) state excitons exhibited a blue shift when excitation power increased. The excited state exciton had a strong polarization dependence that stemmed from the asymmetric localized state. According to temperature-dependence measurements, strong exciton-phonon interaction (48 meV) was observed from an excited exciton state in comparison with the weak exciton-phonon interaction (27 meV) from the ground exciton state, resulting from enhanced confinement in the excited exciton state. In addition, higher activation energy (by 20 meV) was observed for the confined electrons in a single GaAs QR, where the confinement effect was enhanced by the asymmetric ring structure.
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http://dx.doi.org/10.3390/nano12142331 | DOI Listing |
ACS Nano
January 2025
Institute of Photonics and of Nanotechnologies- National Researcher Council (IFN-CNR), LNESS Laboratory, Piazza Leonardo Da Vinci 32, 20133 Milano, Italy.
Manipulating the optical landscape of single quantum dots (QDs) is essential to increase the emitted photon output, enhancing their performance as chemical sensors and single-photon sources. Micro-optical structures are typically used for this task, with the drawback of a large size compared to the embedded single emitters. Nanophotonic architectures hold the promise to modify dramatically the emission properties of QDs, boosting light-matter interactions at the nanoscale, in ultracompact devices.
View Article and Find Full Text PDFJ Chem Phys
December 2024
Max Planck Institute for the Structure and Dynamics of Matter and Center for Free-Electron Laser Science, Luruper Chaussee 149, 22761 Hamburg, Germany.
In this work, we theoretically explore whether a parity-violating/chiral light-matter interaction is required to capture all relevant aspects of chiral polaritonics or if a parity-conserving/achiral theory is sufficient (e.g., long-wavelength/dipole approximation).
View Article and Find Full Text PDFACS Appl Nano Mater
December 2024
Walter Schottky Institut, Technical University of Munich, Garching 85748, Germany.
InAs semiconductor quantum dots (QDs) emitting in the near-infrared are promising platforms for on-demand single-photon sources and spin-photon interfaces. However, the realization of quantum-photonic nanodevices emitting in the telecom windows with similar performance remains an open challenge. In particular, nanophotonic devices incorporating quantum light emitting diodes in the telecom C-band based on GaAs substrates are still lacking due to the relaxation of the lattice constant along the InGaAs graded layer which makes the implementation of electrically contacted devices challenging.
View Article and Find Full Text PDFMode-locked lasers are of interest for applications such as biological imaging, nonlinear frequency conversion, and single-photon generation. In the infrared, chip-integrated mode-locked lasers have been demonstrated through integration of laser diodes with low-loss photonic circuits. However, additional challenges, such as a higher propagation loss and smaller alignment tolerances, have prevented the realization of such lasers in the visible range.
View Article and Find Full Text PDFNanophotonics
April 2024
Jet Propulsiton Laboratory, California Institute of Technology, Pasadena, CA, USA.
We investigate the THz intersubband absorption behavior of a single 40-nm wide GaAs/AlGaAs square quantum well (QW) using Johnson noise thermometry. In our measurements, the Johnson noise associated with intersubband absorption is measured from the in-plane conduction channel of the QW while its intersubband absorption behavior is being tuned through the independent control of the charge density and the perpendicular DC electric field. Our measurements enable the study of intersubband absorption of a small (∼20,000 and potentially fewer) number of electrons in a single mesoscopic device, as well as direct measurement of the electron heating from intersubband absorption.
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