We have elaborated a theoretical approach for the description of polar nematic phases observed by Nishikawa et al. [Adv. Mater. 29, 1702354 (2017)0935-964810.1002/adma.201702354], their structures, and transitions between them. Specific symmetry contributions to the pair molecular potentials provide the molecular mechanisms responsible for the formation of proper and improper polarity on the macroscopic level. An improper antiferroelectric nematic M2 phase can arise between paraelectric nematic M1 and proper ferroelectric nematic MP in the temperature scale. The local polarization in M2 arises mostly due to the local splay deformation. The director distribution in M2 represents the conjugation of cylindrical waves with opposite splay and polarization signs. The director and polarization are parallel to the cylindrical domain axes in the middle of each cylinder but exhibit considerable (mostly radial) deformation on the periphery of each cylinder. Polarization vectors are mostly stacked antiparallel on the borders between the domains without the director disruption. The domain size decreases with the decreasing temperature, the percentage of the antiferroelectric decouplings increases, and M2 exhibits the first-order phase transition into proper ferroelectric MP. With the increasing temperature the domain size in the M2 phase increases, the domination of particular polar orientation of molecules reduces, and finally, the domain size diverges at particular temperature corresponding to the second-order phase transition from M2 to paraelectric M1. Variations of the polar and nonpolar orientational order parameters are estimated within each phase and between the phases. Our experimental and computer simulation results (also presented in the paper) fully support our theoretical findings.
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http://dx.doi.org/10.1103/PhysRevE.105.064701 | DOI Listing |
ACS Appl Mater Interfaces
January 2025
Center for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and Technology, Cheongam-ro 77, Nam-gu, Pohang, Gyeongbuk 37673, South Korea.
A novel approach to delicately control the phase of a ferroelectric has been developed using a continuous-wave laser scanning annealing (CW-LSA) process. After proper process optimization, the equivalent oxide thickness (EOT) of 3.5 Å with a dielectric constant (κ) of 68 Å is achieved from HZO in a metal-ferroelectric-metal (MFM) capacitor structure.
View Article and Find Full Text PDFAdv Mater
December 2024
College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China.
The breaking of inversion symmetry dictates the emergence of electric polarization, whose topological states in superlattices and bulks have received tremendous attention for their intriguing physics brought for novel device design. However, as for substrate oxides such as LaAlO, KTaO, RScO (R = rare earth element), their centrosymmetric trivial attributes make their functionality poorly explored. Here, the discovery of nanoscale thickness gradient-induced nonpolar-to-polar phase transition in band insulator DyScO is reported by using atomic resolution transmission electron microscopy.
View Article and Find Full Text PDFThis article proposes a separate absorption and multiplication (SAM) GaN-based avalanche photodiode (APD) that achieves both high gain and low operating voltage by applying Sc-based ferroelectric material ScGaN in APDs. The avalanche gain of the proposed SAM APD with a low Sc composition p-ScGaN insertion layer reaches 7.2 × 10, which is 60% higher than that of a conventional p-i-p-i-n GaN-based APD.
View Article and Find Full Text PDFAdv Sci (Weinh)
January 2025
Faculty of Chemistry, University of Warsaw, Zwirki i Wigury 101, Warsaw, 02-089, Poland.
A material showing a sequence of three ferroelectric liquid crystalline phases below the paraelectric nematic phase is synthesized and studied. The polar order of molecules appearing due to the dipole-dipole interactions in the ferroelectric nematic, N, phase is preserved also in the smectic phases: orthogonal SmA and tilted SmC. The ferroelectric ground state of both smectic phases is confirmed by their second harmonic generation (SHG) activity and polarization switching.
View Article and Find Full Text PDFACS Appl Mater Interfaces
November 2024
School of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou 450044, China.
We employed first-principles to delve into the strain-induced structural phase transitions in epitaxial LaTaO films. The ground state of bulk LaTaO adopts a monoclinic antiferroelectric phase, characterized by the antiphase rotation of two adjacent oxygen octahedra layers. Under epitaxial tensile strain, LaTaO thin films undergo a consecutive phase transition, namely, antiferroelectric-ferroelectric-antiferroelectric phase transitions.
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