Here, we manifest the design and simulation of an -ZnSe/-SbSe/ -AgInTe dual-heterojunction (DH) solar cell which exhibits a prominent efficiency. The performance of the solar cell has been assessed with reported experimental parameters using SCAPS-1D simulator by varying thickness, doping concentration and defect density in each layer. The proposed structure shows an efficiency of 38.6% with = 0.860 V, = 54.3 mA/cm and FF = 82.77%, respectively. Such a high efficiency close to Shockley-Queisser (SQ) limit of DH solar cell has been achieved as a result of the longer wavelength photon absorption in the -AgInTe back surface field (BSF) layer through a tail-states assisted (TSA) two-step photon upconversion phenomenon. These results indicate hopeful application of AgInTe as a bottom layer in SbSe-based solar cell to enhance the cell performance in future.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9280380 | PMC |
| http://dx.doi.org/10.1016/j.heliyon.2022.e09120 | DOI Listing |
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