The dearth of -type sulfides with thermoelectric performance comparable to that of their type analogues presents a problem in the fabrication of all-sulfide devices. Chalcopyrite (CuFeS) offers a rare example of an -type sulfide. Chemical substitution has been used to enhance the thermoelectric performance of chalcopyrite through preparation of Cu Sn FeS (0 ≤ ≤ 0.1). Substitution induces a high level of mass and strain field fluctuation, leading to lattice softening and enhanced point-defect scattering. Together with dislocations and twinning identified by transmission electron microscopy, this provides a mechanism for scattering phonons with a wide range of mean free paths. Substituted materials retain a large density-of-states effective mass and, hence, a high Seebeck coefficient. Combined with a high charge-carrier mobility and, thus, high electrical conductivity, a 3-fold improvement in power factor is achieved. Density functional theory (DFT) calculations reveal that substitution leads to the creation of small polarons, involving localized Fe states, as confirmed by X-ray photoelectron spectroscopy. Small polaron formation limits the increase in carrier concentration to values that are lower than expected on electron-counting grounds. An improved power factor, coupled with substantial reductions (up to 40%) in lattice thermal conductivity, increases the maximum figure-of-merit by 300%, to ≈ 0.3 at 673 K for CuSnFeS.
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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9281371 | PMC |
http://dx.doi.org/10.1021/acs.chemmater.2c00637 | DOI Listing |
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