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A new [DyBiOCl(saph)] () Werner-type cluster has been prepared, which is the first Dy/Bi polynuclear compound with no metal-metal bond and one of the very few Ln-Bi (Ln = lanthanide) heterometallic complexes reported to date. The molecular compound has been deliberately transformed to its 1-D analogue [DyBiO(N)(saph)] () via the replacement of the terminal Cl ions by end-to-end bridging N groups. The overall metallic skeleton of (and ) can be described as consisting of a diamagnetic {Bi} unit with an elongated trigonal bipyramidal topology, surrounded by a magnetic {Dy} equilateral triangle, which does not contain μ-oxo/hydroxo/alkoxo groups.

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Article Synopsis
  • * This study introduces tin disulfide (SnS) nanoflowers to enhance the properties of polyvinylidene fluoride (PVDF), which is crucial for device performance.
  • * The resulting device can generate 60 volts and efficiently harness mechanical energy from body movements while also excelling in pressure sensing applications.
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While crystalline hybrid solids hold great potential as novel semiconductors, most semiconductive hybrids utilize transition metal ions, which inherently limit carrier mobility due to the small band dispersion derived from the d orbitals. The filled s orbitals of post-transition metal ions offer the potential to design dispersed valence bands, but a method to translate the local structure design of these metal ions to valence band engineering is still in development. This study focuses on Pb-containing hybrid crystals, developing a simple strategy to control the Pb coordination geometry through the molecular design of azole ligands.

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Seven acetylacetonate (acac) metal complexes ranging from early transition metals to post-transition metals were examined by cyclic voltammetry in acetonitrile (MeCN), dichloromethane (DCM), tetrahydrofuran (THF), dimethyl sulfoxide (DMSO), and dimethylformamide (DMF). The electronic potential of any observed redox events is reported along with an analysis of the reversibility of those events across a range of scan rates. Group 8 compounds Fe(acac) Ru(acac) showed at least quasi-reversible reductions across all solvents while Ru(acac) also featured a reversible oxidation.

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Quasi-Van der Waals Epitaxial Growth of γ'-GaSe Nanometer-Thick Films on GaAs(111)B Substrates.

ACS Nano

July 2024

Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.

GaSe is an important member of the post-transition-metal chalcogenide family and is an emerging two-dimensional (2D) semiconductor material. Because it is a van der Waals material, it can be fabricated into atomic-scale ultrathin films, making it suitable for the preparation of compact, heterostructure devices. In addition, GaSe possesses unusual optical and electronic properties, such as a shift from an indirect-bandgap single-layer film to a direct-bandgap bulk material, rare intrinsic p-type conduction, and nonlinear optical behaviors.

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