Using rigorous calculations within the framework of phonon Boltzmann transport theory, we have carried out a detailed investigation to probe the effects of uniform bi-axial strain and finite size on the lattice thermal conductivity () of monolayer AlN. We show that implementation of bi-axial tensile strain can shoot up the value of of monolayer AlN by a large amount unlike in the case of analogous 2D materials. The value of for monolayer AlN is calculated to be 306.5 W m K at room temperature (300 K). The value of can be raised by one order of magnitude to up to 1500.9 W m K at 300 K by applying a bi-axial strain of about 5%. A similar trend persists when the finite size effect is incorporated in the calculation. As the sample size is varied from 10 nm to 10 000 nm along with increasing tensile strain, a huge variation of (from 20.7 W m K to 558.9 W m K) is observed. Our study reveals that the major part of the lattice thermal conductivity of monolayer AlN comes from the contribution of the flexural acoustic (ZA) phonon modes. The anomalous trend of drastic increment in the value of with tensile strain is found to be a direct effect of interaction between nitrogen lone-pair electrons and bonding electrons in the ionic lattice which results in the reduction of phonon anharmonicity with increasing tensile strain. Our study provides a detailed analysis of the strain modulated and size-tuned thermal transport properties of monolayer AlN revealing that it is an impactful 2D material to be used in thermal management devices.

Download full-text PDF

Source
http://dx.doi.org/10.1039/d2cp01513gDOI Listing

Publication Analysis

Top Keywords

monolayer aln
24
tensile strain
16
lattice thermal
12
thermal conductivity
12
conductivity monolayer
12
bi-axial strain
12
strain
8
finite size
8
increasing tensile
8
monolayer
6

Similar Publications

The single-atom catalysts (SACs) for the electrocatalytic nitrogen reduction reaction (NRR) have garnered significant attention in recent years. The NRR is regarded as a milder and greener approach to ammonia synthesis. The pursuit of highly efficient and selective electrocatalysts for the NRR continues to garner substantial interest, yet it poses a significant challenge.

View Article and Find Full Text PDF

Phonon Screening of Excitons in Atomically Thin Semiconductors.

Phys Rev Lett

November 2024

Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA.

Atomically thin semiconductors, encompassing both 2D materials and quantum wells, exhibit a pronounced enhancement of excitonic effects due to geometric confinement. Consequently, these materials have become foundational platforms for the exploration and utilization of excitons. Recent ab initio studies have demonstrated that phonons can substantially screen electron-hole interactions in bulk semiconductors and strongly modify the properties of excitons.

View Article and Find Full Text PDF

Mechanical Properties of Two-Dimensional Metal Nitrides: Numerical Simulation Study.

Nanomaterials (Basel)

October 2024

Centre for Mechanical Engineering, Materials and Processes (CEMMPRE)-Advanced Production and Intelligent Systems, Associated Laboratory (ARISE), Department of Mechanical Engineering, University of Coimbra, Rua Luís Reis Santos, Pinhal de Marrocos, 3030-788 Coimbra, Portugal.

It is expected that two-dimensional (2D) metal nitrides (MNs) consisting of the 13th group elements of the periodic table and nitrogen, namely aluminium nitride (AlN), gallium nitride (GaN), indium nitride (InN) and thallium nitride (TlN), have enhanced physical and mechanical properties due to the honeycomb, graphene-like atomic arrangement characteristic of these compounds. The basis for the correct design and improved performance of nanodevices and complex structures based on 2D MNs from the 13th group is an understanding of the mechanical response of their components. In this context, a comparative study to determine the elastic properties of metal nitride nanosheets was carried out making use of the nanoscale continuum modelling (or molecular structural mechanics) method.

View Article and Find Full Text PDF

Effects of insertion of an h-AlN monolayer spacer in Pt-WSe-Pt field-effect transistors.

Sci Rep

October 2024

Department of Electrophysics, National Yang Ming Chiao Tung University, 1001 University Road, Hsinchu City, 300093, Taiwan.

The growth of two-dimensional hexagonal aluminum nitride (h-AlN) on transition metal dichalcogenide (TMD) monolayers exhibits superior uniformity and smoothness compared to HfO on silicon substrate. This makes an h-AlN monolayer an ideal spacer between the gate oxide material and the WSe monolayer in a two-dimensional field effect transistor (FET). From first principles approaches, we calculate and compare the transmission functions and current densities of Pt-WSe-Pt nanojunctions without and with the insertion of an h-AlN monolayer as a spacer in the gate architecture.

View Article and Find Full Text PDF

Heterostructure catalysts are highly anticipated in the field of photocatalytic water splitting. AlN/ScCF and GaN/ScCF heterostructures are proposed in this work, and the electronic structures were revealed with the first-principles method to explore their photocatalytic properties for water splitting. The results found that the thermodynamically stable AlN/ScCF and GaN/ScCF heterostructures are indirect semiconductors with reduced band gaps of 1.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!