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Devices made using thin-film semiconductors have attracted much interest recently owing to new application possibilities. Among materials systems suitable for thin-film electronics, organic semiconductors are of particular interest; their low cost, biocompatible carbon-based materials and deposition by simple techniques such as evaporation or printing enable organic semiconductor devices to be used for ubiquitous electronics, such as those used on or in the human body or on clothing and packages. The potential of organic electronics can be leveraged only if the performance of organic transistors is improved markedly. Here we present organic bipolar transistors with outstanding device performance: a previously undescribed vertical architecture and highly crystalline organic rubrene thin films yield devices with high differential amplification (more than 100) and superior high-frequency performance over conventional devices. These bipolar transistors also give insight into the minority carrier diffusion length-a key parameter in organic semiconductors. Our results open the door to new device concepts of high-performance organic electronics with ever faster switching speeds.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9217747 | PMC |
| http://dx.doi.org/10.1038/s41586-022-04837-4 | DOI Listing |
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Article Synopsis
- The paper introduces a gate driver designed for IGBT fast switching in compact pulsed power systems, targeting applications in electromagnetic launch and food processing.
- It features a planar transformer with a unique half-turn winding that reduces leakage inductance by 31.1%, which improves the rise time of the driving voltage pulse.
- Testing showed that the gate driver can achieve a current change rate (di/dt) of about 10.10 A/ns with a gate voltage of 50 V and a charging time of 88 ns, confirming its effectiveness for rapid IGBT switching.
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