Background: Aluminum (Al) and indium (In) have been largely used in medicine, pharmacy, dentistry, manufacturing, engineering, clothing as well as food processing and packaging. Our previous study showed that In was accumulated as electron-dense materials in lysosomes of Sertoli and Leydig testicular cells and the liver ones, when administered to male rats as soluble form. For this reason, we have undertaken to confirm whether Al have the same behavior as In and to enlarge this behavior to other organs of the male reproductive system: epididymis and seminal vesicle.
Methods: Experiments were performed on 24 adult male Wistar rat weighing approximately 250 g. Animals were divided to 3 groups, received Al, In or saline solution as 7 chronic intraperitoneal injections over a period of two weeks and were sacrificed 24 h after the last injection. For ultrastructure study we used The Transmission Electron Microscopy (TEM).
Results: The TEM showed the presence of electron-dense granules in lysosomes of testicular cells (Sertoli and Leydig cells), and in the principal epididymal and seminal vesicle cells of Al and In treated rats. Impairments were observed in the endoplasmic reticulum and mitochondria and many vacuoles were identified in the cells cytoplasm. Our results concluded that lysosomes of Leydig and Sertoli cells, principal epididymis, and seminal vesicle cells as well as liver cells, played a central role in the extraction and concentration of Al and In under insoluble form after their introduction into the body as a soluble route. This mechanism intended to protect the organism against exogenous toxic and non-recognized mineral elements after their intrusion into the body.
Conclusion: It looks important to proceed with the study of Al and In impact on the endocrine and exocrine functions of the male rat reproductive system.
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http://dx.doi.org/10.1016/j.jtemb.2022.126997 | DOI Listing |
Nanomaterials (Basel)
December 2024
Division of Physics, Engineering, Mathematics and Computer Sciences and Optical Science Center for Applied Research, Delaware State University, Dover, DE 19901, USA.
This study offers a comprehensive summary of the current states as well as potential future directions of transparent conducting oxides (TCOs), particularly tin-doped indium oxide (ITO), the most readily accessible TCO on the market. Solar cells, flat panel displays (FPDs), liquid crystal displays (LCDs), antireflection (AR) coatings for airbus windows, photovoltaic and optoelectronic devices, transparent p-n junction diodes, etc. are a few of the best uses for this material.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
High-performance, environmentally friendly indium phosphide (InP)-based quantum dots (QDs) are urgently needed to meet the demands of rapidly evolving display and lighting technologies. By adopting the highly efficient and cost-effective one-pot method and utilizing aluminum isopropoxide (AIP) as the Al source, a series of Al-doped InP/(Al)ZnS QDs with emission maxima ranging from 480 to 627 nm were synthesized. The photoluminescence quantum yield (PLQY) of the blue, green, yellow, orange, and red QDs, with emission peaks at 480, 509, 560, 600, and 627 nm, reached 34%, 62%, 86%, 96%, and 85%, respectively.
View Article and Find Full Text PDFInductively coupled plasma mass spectrometry was employed to determine the content of 25 inorganic elements in Bambusae Concretio Silicea, and the elemental fingerprint was established according to the element content. SPSS 20.0 and SIMCA 14.
View Article and Find Full Text PDFHeliyon
November 2024
Departamento de Física y Química, Facultad de Ciencias Exactas y Naturales, Universidad Nacional de Colombia Sede Manizales, Carrera 27 # 64-60, Manizales, 176007, Colombia.
RSC Adv
November 2024
Electronics and Telecommunications Research Institute 218 Gajeong-ro, Yuseong-gu Daejeon 34129 South Korea +82-42-860-5202 +82-42-860-5229.
In this study, we report rapid activation of a solution-processed aluminum oxide gate dielectric film to reduce its processing time under ambient atmosphere. Aluminum precursor films were exposed to a high energy light-pulse and completely converted into dielectric films within 30 seconds (450 pulses). The aluminum oxide gate dielectric film irradiated using intense pulsed light with 450 pulses exhibits a smooth surface and a leakage current density of less than 10 A cm at 2 MV cm.
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