The platinum-tellurium phase diagram exhibits various (meta)stable van der Waals (vdW) materials that can be constructed by stacking PtTe and PtTe layers. Monophase PtTe, being the thermodynamically most stable compound, can readily be grown as thin films. Obtaining the other phases (PtTe, PtTe, PtTe), especially in their ultimate thin form, is significantly more challenging. We show that PtTe thin films can be transformed by vacuum annealing-induced Te-loss into PtTe- and PtTe-bilayers. These transformations are characterized by scanning tunneling microscopy and X-ray and angle resolved photoemission spectroscopy. Once PtTe is formed, it is thermally stable up to 350°C. To transform PtTe into PtTe, a higher annealing temperature of 400°C is required. The experiments combined with density functional theory calculations provide insights into these transformation mechanisms and show that a combination of the thermodynamic preference of PtTe over a phase segregation into PtTe and PtTe and an increase in the Te-vacancy formation energy for PtTe compared to the starting PtTe material is critical to stabilize the PtTe bilayer. To desorb more tellurium from PtTe and transform the material into PtTe, a higher Te-vacancy formation energy has to be overcome by raising the temperature. Interestingly, bilayer PtTe can be retellurized by exposure to Te-vapor. This causes the selective transformation of the topmost PtTe layer into two layers of PtTe, and consequently the synthesis of e PtTe. Thus, all known Pt-telluride vdW compounds can be obtained in their ultrathin form by carefully controlling the stoichiometry of the material.
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http://dx.doi.org/10.1021/acsnano.2c04303 | DOI Listing |
ACS Nano
January 2025
Center for Interdisciplinary Science of Optical Quantum and NEMS Integration, School of Physics, Advanced Research Institute of Multidisciplinary Science, and School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
Two-dimensional in-plane transition-metal dichalcogenide (TMD) junctions have a range of potential applications in next-generation electronic devices. However, limited by the difficulties in ion implantation on 2D systems, the fabrication of the in-plane TMD junctions still relies on the lateral epitaxy of different materials, which always induces lattice mismatch and interfacial scattering. Here, we report the in-plane TMD junction formed with monolayer (ML) PtTe at the boundary of ML and bilayer graphene on SiC.
View Article and Find Full Text PDFNat Commun
January 2025
College of Energy, Xiamen University, Xiamen, China.
The lack of high-efficiency platinum (Pt)-based nanomaterials remains a formidable and exigent challenge in achieving high formic acid oxidation reaction (FAOR) and membrane electrode assembly (MEA) catalysis for direct formic acid fuel cell (DFAFC) technology. Herein, we report 16 Pt-based heterophase nanotrepang with rare earth (RE)-doped face-centered cubic Pt (fcc-Pt) and trigonal Pt-tellurium (t-PtTe) configurations ((RE-Pt)-PtTe HPNT). Yttrium (Y) is identified as the optimal dopant, existing as single sites and clusters on the surface.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510275, P. R. China.
Terahertz (THz) emission arising from the second-order nonlinear photocurrent effects in two-dimensional quantum materials has attracted significant attention due to its high efficiency and ease of polarization manipulation. However, in centrosymmetric quantum materials, the terahertz emission is typically suppressed, caused by the directional symmetry of the photocurrent generated under femtosecond laser excitation. In this work, we report that wafer-scale type-II Dirac semimetal PtTe with lattice centrosymmetry exhibits remarkably high THz emission efficiency (2 orders of magnitude greater than that of a ZnTe nonlinear crystal with equivalent thickness) and pronounced polarization sensitivity at room temperature.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Beijing Academy of Quantum Information Sciences, Beijing 100193, China.
Two-dimensional van der Waals (vdW) layered materials not only are an intriguing fundamental scientific research platform but also provide various applications to multifunctional quantum devices in the field-effect transistors (FET) thanks to their excellent physical properties. However, a metal-semiconductor (MS) interface with a large Schottky barrier causes serious problems for unleashing their intrinsic potentials toward the advancements in high-performance devices. Here, we show that exfoliated vdW Dirac semimetallic PtTe can be an excellent electrode for electrons in MoS FETs.
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