In this paper, we describe the application of the enantiomeric compounds -, each featuring a bulky spiro[fluorene-9,9'-phenanthren]-10'-one moiety, as both hole-transporting materials (HTMs) and interfacial layers in both n-i-p and p-i-n perovskite solar cells (PSCs). These HTMs contain an enantiomeric mixture and a variety of core units linked to triarylamine donors to extend the degree of π-conjugation. The n-i-p PSCs incorporating exhibited a power conversion efficiency (PCE) of 19.15% under AM 1.5G conditions (100 mW cm); this value was comparable with that obtained using as the HTM (18.25%). We obtained efficient and stable p-i-n PSCs having the dopant-free structure indium tin oxide (ITO)/NiO/interfacial layer ()/perovskite/PCBM/BCP/Ag. The presence of the spiro-based compounds and efficiently passivated the interfacial and grain boundary defects of the perovskite and enhanced the sizes of its grains, more so than did and . These spiro-based derivatives packed densely and functioned as Lewis bases to coordinate Pb and Ni ions in the perovskite and NiO layers, respectively. Together, the effects of smaller grain boundaries and defect passivation of the perovskite enhanced the optoelectronic properties of the PSCs. The photoinduced charge carrier extraction in the linearly increasing voltage (photo-CELIV) curves of showed the faster carrier transport 3.3 × 10 cm V s, which improved the carrier mobility, supporting the notion of defect passivation of the perovskite. The best-performing NiO/ device provided a short-circuit current density () of 22.88 mA cm, an open-circuit voltage () of 1.10 V, and a fill factor (FF) of 80.93%, corresponding to an overall PCE of 20.37%. In addition, the PCEs of the NiO/ and NiO/ PSC devices underwent decays of only 98.1 and 97.0% of their original values after 41 days under an Ar atmosphere. Thus, these derivatives passivated the NiO surface and optimized the film quality of perovskites, thereby leading to superior PCEs of their respective PSCs.

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http://dx.doi.org/10.1021/acsami.2c03025DOI Listing

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