Achieving High Thermoelectric Performance of Eco-Friendly SnTe-Based Materials by Selective Alloying and Defect Modulation.

ACS Appl Mater Interfaces

Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China.

Published: June 2022

AI Article Synopsis

  • Rock-salt lead-free chalcogenide SnTe-based thermoelectric materials are being explored as an eco-friendly alternative to toxic PbTe, but face challenges like high carrier concentration and thermal conductivity.
  • Incorporating Na into SnTe helps improve its thermoelectric efficiency by modifying the electronic band structure, optimizing carrier concentration, and introducing features that enhance performance.
  • The Na-doped SnTe sample achieves a significant increase in the power factor and a substantial decrease in thermal conductivity, highlighting its potential for effective thermoelectric applications, particularly in high-temperature power generation.

Article Abstract

Recently, rock-salt lead-free chalcogenide SnTe-based thermoelectric (TE) materials have been considered an alternative to PbTe because of the nontoxic properties of Sn as compared to Pb. However, high carrier concentration that originated from intrinsic Sn vacancies and relatively high thermal conductivity of pristine SnTe lead to poor TE efficiency, which makes room for improving its TE properties. In this study, we present that the Na incorporation into the SnTe matrix is helpful for modifying the electronic band structure, optimization of carrier concentration, introducing dislocations, and kink planes; benefiting from these synergistic effects obviates the disadvantages of SnTe and makes a significant improvement in TE performance. We reveal that Na favorably impacts the structure of electronic bands by valence, conduction band engineering, leading to a nice enhancement in the Seebeck coefficient, which exhibits the highest power factor value of 37.93 μWcm K at 898 K, representing the best result for the SnTe material system. Moreover, a broader phonon spectrum is introduced by new phonon-scattering centers, scattered by dislocations and kink planes which suppressed lattice thermal conductivity to 0.57 Wm K at 898 K, which is much lower than that of pristine SnTe. Ultimately, a maximum of 1.26 at 898 K is achieved in the SnTe + 3% Na sample, which is 97% higher than that of the pristine SnTe, suggesting that SnTe-based materials are a robust candidate for TE applications specifically, an ideal alternative of lead chalcogenides for TE power generation at high temperatures.

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Source
http://dx.doi.org/10.1021/acsami.2c05691DOI Listing

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