During area-selective atomic layer deposition (ALD) based on growth inhibitors, nucleation eventually occurs as the metal precursor reacts with the surface through secondary pathways. We show that ALD of AlO on functionalized SiO can be significantly delayed by using a lower reactivity, heteroleptic precursor at well below the saturation dose.
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| http://dx.doi.org/10.1039/d2cc01967a | DOI Listing |
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