Localised structuring of metal-semiconductor cores in silica clad fibres using laser-driven thermal gradients.

The molten core drawing method allows scalable fabrication of novel core fibres with kilometre lengths. With metal and semiconducting components combined in a glass-clad fibre, CO laser irradiation was used to write localised structures in the core materials. Thermal gradients in axial and transverse directions allowed the controlled introduction, segregation and chemical reaction of metal components within an initially pure silicon core, and restructuring of heterogeneous material. Gold and tin longitudinal electrode fabrication, segregation of GaSb and Si into parallel layers, and Al doping of a GaSb core were demonstrated. Gold was introduced into Si fibres to purify the core or weld an exposed fibre core to a Si wafer. Ga and Sb introduced from opposite ends of a silicon fibre reacted to form III-V GaSb within the Group IV Si host, as confirmed by structural and chemical analysis and room temperature photoluminescence.