The CsSnBrphotodetectors are fabricated by thermal evaporation and 75 °Cannealing, and the effect ofannealing on the morphology, structure, exciton dynamics and photoresponse of thermally evaporated CsSnBrfilms are investigated. Especially, temperature dependent steady-state photoluminescence (PL) and transient PL decaying have been analyzed in details for understanding the exciton dynamics. Meanwhile, effect of annealing on the activation energy for trap sites (), exciton binding energy (), activation energy for interfacial trapped carriers (Δ), trap densities and carriers mobilities are studied and the annealed (A-CsSnBr) reveals obviously lowerand trap density together with notably higher carrier mobility than those of the unannealed (UA-CsSnBr). Temperature dependence of the integrated PL intensity can be ascribed to the combining effect of the exciton dissociation, exciton quenching through trap sites and thermal activation of trapped carriers. The temperature dependent transient PL decaying analysis indicates that the PL decaying mechanism at low and high temperature is totally different from that in intermediate temperature range, in which combing effect of free exciton and localized state exciton decaying prevail. The beneficial effects of theannealing on the photoresponse performance of the CsSnBrfilms can be demonstrated by the remarkable enhancement of the optimal responsivity () afterannealing which increases from less than 1 A Wto 1350 A Was well as dramatically improved noise equivalent power, specific detectivity* and Gain ().
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