AI Article Synopsis
- Continuous advancements in electronic devices beyond traditional silicon require the integration of ferroelectric and semiconductor materials, particularly hafnium oxide (HfO).
- Recent research shows that local helium (He) implantation can activate ferroelectric properties in HfO, although the mechanisms behind this process are still not fully understood.
- The study explores various factors like molar volume changes and vacancy dynamics caused by He ion implantation, which provides insights into the origins of ferroelectricity and potential for developing new nanoengineered materials.
Article Abstract
Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices requires integration of ferroelectric and semiconductor materials. The emergence of hafnium oxide (HfO)-based ferroelectrics that are compatible with atomic-layer deposition has opened interesting and promising avenues of research. However, the origins of ferroelectricity and pathways to controlling it in HfO are still mysterious. We demonstrate that local helium (He) implantation can activate ferroelectricity in these materials. The possible competing mechanisms, including He ion-induced molar volume changes, vacancy redistribution, vacancy generation, and activation of vacancy mobility, are analyzed. These findings both reveal the origins of ferroelectricity in this system and open pathways for nanoengineered binary ferroelectrics.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1126/science.abk3195 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Origin of Chiral Phase Transition of Polar Vortex in Ferroelectric/Dielectric Superlattices.
Nano Lett
January 2025
Department of Engineering Mechanics, Zhejiang University, Hangzhou, 310027 Zhejiang, China.
Chiral vortices and their phase transition in ferroelectric/dielectric heterostructures have drawn significant attention in the field of condensed matter. However, the dynamical origin of the chiral phase transition from achiral to chiral polar vortices has remained elusive. Here, we develop a phase-field perturbation model and discover the softening of out-of-plane vibration mode of polar vortices in [(PbTiO)/(SrTiO)] superlattices at a critical epitaxial strain or temperature.
View Article and Find Full Text PDFProximity ferroelectricity in wurtzite heterostructures.
Nature
January 2025
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA.
Proximity ferroelectricity is an interface-associated phenomenon in electric-field-driven polarization reversal in a non-ferroelectric polar material induced by one or more adjacent ferroelectric materials. Here we report proximity ferroelectricity in wurtzite ferroelectric heterostructures. In the present case, the non-ferroelectric layers are AlN and ZnO, whereas the ferroelectric layers are AlBN, AlScN and ZnMgO.
View Article and Find Full Text PDFStacking ferroelectricity in two-dimensional van der Waals materials.
J Phys Condens Matter
January 2025
Department of Physics, Southern University of Science and Technology, 1088 Xueyuan Rd, Xili, Nanshan District, Shenzhen, 518055, CHINA.
Miniaturization of ferroelectrics for technological applications has proven challenging due to the suppression of electric polarization caused by increasing depolarization fields as material thickness decreases. The emergence of ferroelectricity in two-dimensional (2D) van der Waals (vdW) materials offers a potential solution to this challenge, prompting significant research efforts over the past decade. While intrinsic 2D vdW ferroelectrics are scarce, polar stacking provides a more general approach to introducing ferroelectricity in these materials.
View Article and Find Full Text PDFDual Mechanism for Transient Capacitance Anomaly in Improper Ferroelectrics.
Phys Rev Lett
December 2024
Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588, USA.
Negative capacitance (NC) effects in ferroelectrics can potentially break fundamental limits of power dissipation known as "Boltzmann tyranny." However, the origin of transient NC of ferroelectrics, which is attributed to two different mechanisms involving free-energy landscape and nucleation, is under intense debate. Here, we report the coexistence of transient NC and an S-shaped anomaly during the switching of ferroelectric hexagonal ferrites capacitor in an RC circuit.
View Article and Find Full Text PDFDual Ferroelectric Polarization and Dielectric Response Improvement in Epitaxial HfZrO/HfO Nanolaminates.
ACS Appl Mater Interfaces
January 2025
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Spain.
Nanolaminates based on ferroelectric polycrystalline doped HfO have gained interest because those compounds show enhanced functional properties. Here, we achieve coexisting improvement of remanent polarization and dielectric permittivity in wake-up-free epitaxial HfZrO/HfO nanolaminates with different numbers of HfO nanolayers if compared with HfZrO single films of equivalent thickness or other reported polycrystalline nanolaminates. Comprehensive structural characterization reveals that the origin of the enhancement must be the larger amount of the orthorhombic phase in the nanolaminates.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!