AI Article Synopsis
- A Schottky barrier diode (SBD) solar-blind photodetector was created using single crystal β-GaO, with Cu and Ti/Au serving as Schottky and ohmic contacts.
- The SBD achieved a high rectification ratio of up to 5 × 10 at ±2 V and showed maximum responsivity at a wavelength of 241 nm.
- The device displayed impressive rejection ratios for solar-blind/ultraviolet and solar-blind/visible light, reaching up to 200 and 1000, respectively, and it can operate as a self-powered photodetector without needing any external bias.
Article Abstract
A Schottky barrier diode (SBD) solar-blind photodetector was fabricated based on the single crystal β-GaO. Cu and Ti/Au were deposited on the top and bottom surface of GaO as Schottky and ohmic contacts, respectively. The SBD exhibits a higher rectification ratio of up to 5 × 10 at ±2 V. The photoresponse spectra show a maximum responsivity at 241 nm and a cutoff wavelength of 256 nm. The solar-blind/ultraviolet and solar-blind/visible rejection ratio can reach a high level of up to 200 and 1000, respectively. It is interesting that the device has a clear response to the solar-blind wavelength at zero bias, which confirms it can be used as a self-powered solar-blind photodetector.
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Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9078229 | PMC |
| http://dx.doi.org/10.1039/c8ra00523k | DOI Listing |
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