To achieve high detectivity of organic photodetectors (OPDs), we investigated hafnium oxide (HfO) as an electron blocking layer in an attempt to obtain a low leakage current and high photocurrent by the tunneling effect. The prepared devices consisted of indium tin oxide (ITO)/HfO/(poly(3-hexylthiophene-2,5-diyl)[P3HT]:PCBM)/Yb/Al. To explore the tunneling effect in a hafnium oxide thin film, we fabricated a thin film using successive ionic layer deposition. The results for hafnium oxide were compared with those for aluminum oxide and poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (PEDOT:PSS). We found that hafnium oxide results in a low leakage current and high photocurrent owing to the tunneling effect in the OPDs. The resulting detectivity of 1.76 × 10 Jones for a film thickness of 5.5 nm and bandwidth of ∼100 kHz is suitable for commercialization.
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