AI Article Synopsis
- The study investigates CsAgBiBr, a double perovskite crystal, as a potential material for radiation detection due to its desirable properties.
- CsAgBiBr crystals were successfully grown using a solution growth technique, exhibiting high resistivity greater than 10 Ω cm, which minimizes leakage current for semiconductor detectors.
- Analysis indicated that CsAgBiBr is a p-type semiconductor with the Fermi level at 0.788 eV above the valence band and revealed two near band gap energies at 1.917 eV and 2.054 eV through low-temperature cathodoluminescence measurements.
Article Abstract
In this work, we explored the possibility of using CsAgBiBr, a double perovskite crystal, for radiation detection. CsAgBiBr crystals were grown using the solution growth technique. The resistivity of the as-grown CsAgBiBr crystal is larger than 10 Ω cm, which is high enough to ensure low leakage current for fabrication of semiconductor radiation detectors. Using the temperature-dependent resistivity measurements, we estimated that the Fermi level is at 0.788 eV above the valence band and the material is a p-type semiconductor. From the low-temperature cathodoluminescence measurements, two near band gap energies at 1.917 eV and 2.054 eV were revealed.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9069327 | PMC |
| http://dx.doi.org/10.1039/c9ra04045e | DOI Listing |
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