Controlled synthesis of uniform multilayer hexagonal boron nitride films on FeB alloy.

RSC Adv

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences Shanghai 200050 China

Published: March 2019

AI Article Synopsis

  • Two-dimensional hexagonal boron nitride (h-BN) is valued for its excellent insulating properties and lack of dangling bonds, but synthesizing large-scale multilayer h-BN remains challenging.
  • Researchers successfully demonstrated the growth of multilayer h-BN using a chemical vapor deposition (CVD) method with iron boride (FeB) alloy and nitrogen as precursors, which allows for controlled synthesis.
  • Characterization techniques confirmed the uniform quality and layered structure of the h-BN, highlighting its potential for future applications in 2D electronics and optoelectronics.

Article Abstract

Two-dimensional (2D) hexagonal boron nitride (h-BN) is highly appreciated for its excellent insulating performance and absence of dangling bonds, which could be employed to maintain the intrinsic properties of 2D materials. However, controllable synthesis of large scale multilayer h-BN is still very challenging. Here, we demonstrate chemical vapor deposition (CVD) growth of multilayer h-BN by using iron boride (FeB) alloy and nitrogen (N) as precursors. Different from the self-limited growth mechanism of monolayer h-BN on catalytic metal surfaces, with sufficient B source in the bulk, FeB alloy promotes the controllable isothermal segregation of multilayer h-BN by reacting with active N atoms on the surface of the substrate. Microscopic and spectroscopic characterizations prove the high uniformity and crystalline quality of h-BN with a highly orientated layered lattice structure. The achievement of large scale multilayer h-BN in this work would facilitate its applications in 2D electronics and optoelectronics in the future.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9062396PMC
http://dx.doi.org/10.1039/c9ra00595aDOI Listing

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