Similar Publications

κ/β-GaO Type-II Phase Heterojunction.

Adv Mater

January 2025

Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, Division of Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia.

Ultrawide-bandgap gallium oxide (GaO) holds immense potential for crucial applications such as solar-blind photonics and high-power electronics. Although several GaO polymorphs, i.e.

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The wide-bandgap semiconductor material GaO exhibits great potential in solar-blind deep-ultraviolet (DUV) photodetection applications, including none-line-of-sight secure optical communication, fire warning, high-voltage electricity monitoring, and maritime fog dispersion navigation. However, GaO photodetectors have traditionally faced challenges in achieving both high responsivity and fast response time, limiting their practical application. Herein, the GaO solar-blind DUV photodetectors with a suspended structure have been constructed for the first time.

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Zr-Doping Strategy of High-Quality CuO/β-GaO Heterojunction for Ultrahigh-Performance Solar-Blind Ultraviolet Photodetection.

ACS Appl Mater Interfaces

November 2024

Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education and School of Materials Science and Engineering, Shandong University, Jinan 250061, China.

β-GaO, as an ultrawide band gap semiconductor, has emerged as the most promising candidate in solar-blind photodetectors. The practical application of β-GaO, however, suffers from intrinsic defects and suboptimal crystal quality within the devices. In this work, high-quality β-GaO was successfully synthesized by employing the Zr-doping strategy, which has facilitated the development of ultrahigh-performance solar-blind photodetectors based on CuO/β-GaO heterostructures.

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This investigation presents a self-powered, solar-blind photodetector utilizing a low-temperature fabricated crystalline NiO/ZnGaO heterojunction with a staggered type-II band alignment. The device leverages the pyrophototronic effect (PPE), combining the photoelectric effect in the p-n junction and the pyroelectric effect in the non-centrosymmetric ZnGaO crystal. This synergistic effect enhances the photodetector's performance parameters, thereby outperforming traditional solar-blind photodetectors.

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Narrowband Solar-Blind Photodetection of the Plasmonic (InGa)O Detector via the Synergetic Enhancement of Small-Sized Ag-Nanoparticle Photoabsorbance and Surface Modification.

ACS Appl Mater Interfaces

October 2024

Inner Mongolia Key Laboratory of Intelligent Communication and Sensing and Signal Processing, School of Electronic Information Engineering, Inner Mongolia University, Hohhot 010021, People's Republic of China.

Currently, research on Ag nanoparticles (AgNPs) predominantly focuses on UV/visible photodetection and UV emission, seemingly overlooking the significance of Ag in enhancing deep ultraviolet photon detection. In this work, (InGa)O thin films were fabricated by plasma-enhanced chemical vapor deposition. Due to the unique photoabsorbance characteristic and better interaction with photons of small-sized AgNPs, they effectively suppress the UVB absorbance caused by energy band engineering in the (InGa)O thin film while enhancing photoabsorbance in UVC due to the surface plasmon effect.

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