Vertically aligned nanorod arrays (NRAs), with effective optical coupling with the incident light and rapid electron transport for photogenerated carriers, have attracted much interest for photoelectric devices. Herein, the monoclinic β-GaO NRAs with an average diameter/length of 500 nm/1.287 μm were prepared by the hydrothermal and post-annealing method. Then a circular Ti/Au electrode was patterned on β-GaO NRAs to fabricate solar-blind deep ultraviolet photodetectors. At zero bias, the device shows a photoresponsivity ( ) of 10.80 mA W and a photo response time of 0.38 s under 254 nm light irradiation with a light intensity of 1.2 mW cm, exhibiting a self-powered characteristic. This study presents a promising candidate for use in solar-blind deep ultraviolet photodetection with zero power consumption.
Download full-text PDF |
Source |
---|---|
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9060881 | PMC |
http://dx.doi.org/10.1039/c8ra10371b | DOI Listing |
Adv Mater
January 2025
Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, Division of Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia.
Ultrawide-bandgap gallium oxide (GaO) holds immense potential for crucial applications such as solar-blind photonics and high-power electronics. Although several GaO polymorphs, i.e.
View Article and Find Full Text PDFResearch (Wash D C)
December 2024
Hangzhou Institute of Technology, Xidian University, Hangzhou 311200, China.
The wide-bandgap semiconductor material GaO exhibits great potential in solar-blind deep-ultraviolet (DUV) photodetection applications, including none-line-of-sight secure optical communication, fire warning, high-voltage electricity monitoring, and maritime fog dispersion navigation. However, GaO photodetectors have traditionally faced challenges in achieving both high responsivity and fast response time, limiting their practical application. Herein, the GaO solar-blind DUV photodetectors with a suspended structure have been constructed for the first time.
View Article and Find Full Text PDFACS Appl Mater Interfaces
November 2024
Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education and School of Materials Science and Engineering, Shandong University, Jinan 250061, China.
β-GaO, as an ultrawide band gap semiconductor, has emerged as the most promising candidate in solar-blind photodetectors. The practical application of β-GaO, however, suffers from intrinsic defects and suboptimal crystal quality within the devices. In this work, high-quality β-GaO was successfully synthesized by employing the Zr-doping strategy, which has facilitated the development of ultrahigh-performance solar-blind photodetectors based on CuO/β-GaO heterostructures.
View Article and Find Full Text PDFACS Appl Mater Interfaces
October 2024
Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India.
This investigation presents a self-powered, solar-blind photodetector utilizing a low-temperature fabricated crystalline NiO/ZnGaO heterojunction with a staggered type-II band alignment. The device leverages the pyrophototronic effect (PPE), combining the photoelectric effect in the p-n junction and the pyroelectric effect in the non-centrosymmetric ZnGaO crystal. This synergistic effect enhances the photodetector's performance parameters, thereby outperforming traditional solar-blind photodetectors.
View Article and Find Full Text PDFACS Appl Mater Interfaces
October 2024
Inner Mongolia Key Laboratory of Intelligent Communication and Sensing and Signal Processing, School of Electronic Information Engineering, Inner Mongolia University, Hohhot 010021, People's Republic of China.
Currently, research on Ag nanoparticles (AgNPs) predominantly focuses on UV/visible photodetection and UV emission, seemingly overlooking the significance of Ag in enhancing deep ultraviolet photon detection. In this work, (InGa)O thin films were fabricated by plasma-enhanced chemical vapor deposition. Due to the unique photoabsorbance characteristic and better interaction with photons of small-sized AgNPs, they effectively suppress the UVB absorbance caused by energy band engineering in the (InGa)O thin film while enhancing photoabsorbance in UVC due to the surface plasmon effect.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!