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Optoelectronic synaptic devices have been regarded as the key component in constructing neuromorphic computing systems. However, the optoelectronic synapses based on conventional 2D transistor are still suffering low photosensitivity and volatile retention behavior, which can affect the recognition accuracy and long-term memory. Here, a novel optoelectronic synaptic device based on surface-state-rich CdSe nanobelt photosensitized 2D MoS transistor is demonstrated.

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1D/2D Heterostructures as Ultrathin Catalysts for Hydrogen Evolution Reaction.

Small

November 2020

Department Key Lab of Organic Optoelectronics & Molecular Engineering, Department of Chemistry, Tsinghua University, Beijing, 100084, China.

2D MoS has emerged as a promising alternative to Pt-based catalysts for hydrogen evolution reaction (HER) due to its low cost and earth abundance. However, insufficient active sites of basal plane and poor conductivity become the foremost factors restricting the catalytic performance of MoS . Here, a facile strategy is presented to enhance the HER performance of MoS by converting its 2D structure into 1D/2D heterostructures of Mo Te /MoS Te by the in situ tellurization.

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Shape-dependent close-edge 2D-MoS nanobelts.

RSC Adv

September 2020

Chinese Academy of Sciences (CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology Beijing 100190 P. R. China

Atomic-thin MoS materials have attracted increasing attention due to their potentials in numerous fields. However, in 2D-MoS sheets, the edge region usually has unique features differing from the interior region, which has potential application in enhancing catalysts and shape-dependent 2D-nanodevices. However, fabricating it cost-effectively is still very difficult.

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Optically Active 1D MoS Nanobelts.

ACS Appl Mater Interfaces

February 2018

Department of Materials Science and Engineering,§Northwestern University Atomic and Nanoscale Characterization Experimental (NUANCE) Center, ⊥International Institute for Nanotechnology (IIN), and ∥Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, United States.

Transition metal dichalcogenides can be synthesized in a wide range of structures. 1D geometries, including nanotubes and nanowires, are especially intriguing due to enhanced light-matter interactions stemming from both the thickness and width possessing subwavelength dimensions. In this letter, we demonstrate the synthesis of 1D MoS nanobelts through chemical vapor deposition and examine the mechanism driving the formation of this material.

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