Although cuprous phosphide (CuP) has been widely studied and applied in other fields, its photoluminescence (PL) properties are rarely investigated. Herein, we report that CuP can emit near-infrared light at 750 nm. We show that the annealing and the presence of cuprous oxide can enhance the PL emission. The mechanism of the PL enhancement is the improvement of crystal quality and the formation of a space charge region. Our results provide a reference for improving the PL properties of p-type semiconductors.
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|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9042379 | PMC |
| http://dx.doi.org/10.1039/d1ra07112b | DOI Listing |
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