Two-dimensional (2D) molybdenum ditelluride (MoTe) is an interesting material for fundamental study and applications, due to its ability to exist in different polymorphs of 2H, 1T, and 1T', their phase change behavior, and unique electronic properties. Although much progress has been made in the growth of high-quality flakes and films of 2H and 1T'-MoTe phases, phase-selective growth of all three phases remains a huge challenge, due to the lack of enough information on their growth mechanism. Herein, we present a novel approach to growing films and geometrical-shaped few-layer flakes of 2D 2H-, 1T-, and 1T'-MoTe by atmospheric-pressure chemical vapor deposition (APCVD) and present a thorough understanding of the phase-selective growth mechanism by employing the concept of thermodynamics and chemical kinetics involved in the growth processes. Our approach involves optimization of growth parameters and understanding using thermodynamical software, HSC Chemistry. A lattice strain-mediated mechanism has been proposed to explain the phase selective growth of 2D MoTe, and different chemical kinetics-guided strategies have been developed to grow MoTe flakes and films.
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http://dx.doi.org/10.1039/d1ra07787b | DOI Listing |
Dalton Trans
January 2025
Department of Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, 2907 East Gate City Boulevard, Greensboro, NC 27401, USA.
Facile phase selective synthesis of copper antimony sulphide (CAS) nanostructures is important because of their tunable photoconductive and electrochemical properties. In this study, off-stoichiometric famatinite phase CAS (CAS) quasi-spherical and quasi-hexagonal colloidal nanostructures (including nanosheets) of sizes, 2.4-18.
View Article and Find Full Text PDFNano Lett
October 2024
Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States.
Rhombohedral polytype transition metal dichalcogenide (TMDC) multilayers exhibit non-centrosymmetric interlayer stacking, which yields intriguing properties such as ferroelectricity, a large second-order susceptibility coefficient χ, giant valley coherence, and a bulk photovoltaic effect. These properties have spurred significant interest in developing phase-selective growth methods for multilayer rhombohedral TMDC films. Here, we report a confined-space, hybrid metal-organic chemical vapor deposition method that preferentially grows 3R-WS multilayer films with thickness up to 130 nm.
View Article and Find Full Text PDFACS Nano
May 2024
Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China.
Two-dimensional (2D) tetragonal FeSe has sparked extensive research interest owing to its tunable superconductivity, providing valuable insights into the design of high-temperature superconductors. Currently, the intricate Fe-Se phase diagram poses a challenge to the controlled synthesis of superconducting 2D FeSe in a pure tetragonal phase. Here, we exploit the ion-exchange property of fluorophlogopite mica to devise a straightforward approach for the phase-controlled synthesis of tetragonal FeSe on an Fe-enriched mica surface within a molten salt environment.
View Article and Find Full Text PDFNat Commun
February 2024
Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore, Singapore.
Phase engineering of two-dimensional transition metal dichalcogenides (2D-TMDs) offers opportunities for exploring unique phase-specific properties and achieving new desired functionalities. Here, we report a phase-selective in-plane heteroepitaxial method to grow semiconducting H-phase CrSe. The lattice-matched MoSe nanoribbons are utilized as the in-plane heteroepitaxial template to seed the growth of H-phase CrSe with the formation of MoSe-CrSe heterostructures.
View Article and Find Full Text PDFAdv Mater
April 2024
Department of Chemistry, City University of Hong Kong, Hong Kong, China.
2D heterostructures are emerging as alternatives to conventional semiconductors, such as silicon, germanium, and gallium nitride, for next-generation electronics and optoelectronics. However, the direct growth of 2D heterostructures, especially for those with metastable phases still remains challenging. To obtain 2D transition metal dichalcogenides (TMDs) with designed phases, it is highly desired to develop phase-controlled synthetic strategies.
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