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Interplay of sidewall damage and light extraction efficiency of micro-LEDs. | LitMetric

AI Article Synopsis

  • - This letter examines the effects of mesa shape on micro light-emitting diodes (µLEDs) by analyzing various geometries (circular, square, and stripes) within a 400 µm area.
  • - The study finds that while the internal quantum efficiency (IQE) decreases with longer mesa periphery, light extraction efficiency (ηe) improves with increased perimeter.
  • - It highlights how etching sidewalls with tetramethylammonium hydroxide (TMAH) can enhance peak external quantum efficiency (EQE) and reduce non-radiative recombination, suggesting a critical relationship between non-radiative recombination and light extraction efficiency for shrinking µLEDs.

Article Abstract

This Letter describes the impact of shape on micro light-emitting diodes (µLEDs), analyzing 400 µm area µLEDs with various mesa shapes (circular, square, and stripes). Appropriate external quantum efficiency (EQE) can yield internal quantum efficiency (IQE) which decreases with increasing peripheral length of the mesas. However, light extraction efficiency (ηe) increased with increasing mesa periphery. We introduce analysis of Jpeak (the current at peak EQE) since it is proportional to the non-radiative recombination. Etching the sidewalls using tetramethylammonium hydroxide (TMAH) increased the peak EQE and decreased the sidewall dependency of Jpeak. Quantitatively, the TMAH etching reduced non-radiative surface recombination by a factor of four. Hence, shrinking µLEDs needs an understanding of the relationship between non-radiative recombination and ηe, where analyzing Jpeak can offer new insights.

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Source
http://dx.doi.org/10.1364/OL.456993DOI Listing

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