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Reduced Recombination and Improved Performance of CdSe/CdTe Solar Cells due to Cu Migration Induced by Light Soaking. | LitMetric

AI Article Synopsis

  • CdTe solar cells have seen significant improvements with the addition of Se, but the stability of Cu-doped Se-alloyed devices is not well understood compared to older CdS/CdTe cells.
  • Researchers created various CdSe/CdTe solar cells by controlling CdSe layer thickness and analyzed their performance after light soaking.
  • While most devices lost efficiency with light soaking, those with a 120 nm CdSe layer initially had 13.5% efficiency, which increased to 16.5% after exposure, linked to reduced nonradiative recombination and defect passivation.

Article Abstract

The performance of CdTe solar cells has advanced impressively in recent years with the incorporation of Se. Instabilities associated with light soaking and copper reorganization have been extensively examined for the previous generation of CdS/CdTe solar cells, but instabilities in Cu-doped Se-alloyed CdTe devices remain relatively unexplored. In this work, we fabricated a range of CdSe/CdTe solar cells by sputtering CdSe layers with thicknesses of 100, 120, 150, 180, and 200 nm on transparent oxide-coated glass and then depositing CdTe by close-spaced sublimation. After CdCl annealing, Cu-doping, and back metal deposition, a variety of analyses were performed both before and after light soaking to understand the changes in device performance. The device efficiency was degraded with light soaking in most cases, but devices fabricated with a CdSe layer thickness of 120 nm showed reasonably good efficiency initially (13.5%) and a dramatic improvement with light soaking (16.5%). The efficiency improvement is examined within the context of Cu ion reorganization that is well known for CdS/CdTe devices. Low-temperature photoluminescence data and versus temperature measurements indicate a reduction in nonradiative recombination due to the passivation of defects and defect complexes in the graded CdSeTe layer.

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Source
http://dx.doi.org/10.1021/acsami.1c23937DOI Listing

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