Photocatalytic reduction of CO has attracted enormous interest as a sustainable and renewable source of energy. In the past decade, numerous bulk-type semiconductors have been developed, but the existing designs suffer many limitations, namely rapid recombination of charge carriers and weak light absorption ability. Herein, a bottom-up approach was developed to design atomically thin sulfur-doped Bi WO perovskite nanosheets (S-BWO) with improved reduction ability, extended visible light absorption, prolonged lifetime of charge carriers, enhanced adsorption of CO , and reduced work function. Compared with pristine Bi WO (P-BWO), S-BWO nanosheets exhibited a 3-fold improvement in photocatalytic reduction of CO under simulated sunlight irradiation. Experimental studies and density functional theory calculations revealed the synergistic roles of atomically thin nanosheets and S atoms in promoting photocatalytic efficiency.
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http://dx.doi.org/10.1002/cssc.202200471 | DOI Listing |
Nano Converg
January 2025
Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute, 29 Geumgu-gil, Jeongeup-si, Jeolabuk-do, 56212, Republic of Korea.
Metal-oxide thin-film semiconductors have been highlighted as next-generation space semiconductors owing to their excellent radiation hardness based on their dimensional advantages of very low thickness and insensitivity to crystal structure. However, thin-film transistors (TFTs) do not exhibit intrinsic radiation hardness owing to the chemical reactions at the interface exposed to ambient air. In this study, significantly enhanced radiation hardness of AlO-passivated ZnO TFTs against high-energy protons with energies of up to 100 MeV is obtained owing to the passivation layer blocking interactions with external reactants, thereby maintaining the chemical stability of the thin-film semiconductor.
View Article and Find Full Text PDFPhys Rev Lett
December 2024
National University of Singapore, Department of Materials Science and Engineering, 9 Engineering Drive 1, Singapore 117575.
By virtue of being atomically thin, the electronic properties of heterostructures built from two-dimensional materials are strongly influenced by atomic relaxation. The atomic layers behave as flexible membranes rather than rigid crystals. Here we develop an analytical theory of lattice relaxation in twisted moiré materials.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
January 2025
Leibniz-Institut fur Festkorper- und Werkstoffforschung Dresden eV, Helmholtzstraße 20, 01069, Dresden, GERMANY.
This study presents the first successful demonstration of growing elemental bismuth (Bi) thin films via thermal atomic layer deposition (ALD) using Bi(NMe2)3 as the precursor and Sb(SiMe3)3 as the co-reactant. The films were deposited at a relatively low temperature of 100 °C, with a growth per cycle (GPC) of 0.31-0.
View Article and Find Full Text PDFDalton Trans
January 2025
Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, T12 R5CP, Ireland.
Layered materials, such as tungsten dichalcogenides (TMDs), are being studied for a wide range of applications, due to their unique and varied properties. Specifically, their use as either a support for low dimensional catalysts or as an ultrathin diffusion barrier in semiconductor devices interconnect structures are particularly relevant. In order to fully realise these possible applications for TMDs, understanding the interaction between metals and the monolayer they are deposited on is of utmost importance.
View Article and Find Full Text PDFNanoscale
January 2025
School of Chemical Sciences, National Institute of Science Education and Research (NISER), Bhubaneswar, Odisha 752050, India.
The performance of an optoelectronic device is largely dependent on the light harvesting properties of the active material as well as the dynamic behaviour of the photoexcited charge carriers upon absorption of light. Recently, atomically thin two-dimensional transition metal dichalcogenides (2D TMDCs) have garnered attention as highly prospective materials for advanced ultrathin solar cells and other optoelectronic applications, owing to their strong interaction with electromagnetic radiation, substantial optical conductivity, and impressive charge carrier mobility. WSe is one such extremely promising solar energy material.
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