In this paper, we present the so-called continuous Kubo-Greenwood formula intended for the numerical calculation of the dynamic Onsager coefficients and, in particular, the real part of dynamic electrical conductivity. In contrast to the usual Kubo-Greenwood formula, which contains the summation over a discrete set of transitions between electron energy levels, the continuous one is formulated as an integral over the whole energy range. This integral includes the continuous functions: the smoothed squares of matrix elements, D(ɛ,ɛ+ℏω), the densities of state, g(ɛ)g(ɛ+ℏω), and the difference of the Fermi weights, [f(ɛ)-f(ɛ+ℏω)]/(ℏω). The function D(ɛ,ɛ+ℏω) is obtained via the specially developed smoothing procedure. From the theoretical point of view, the continuous formula is an alternative to the usual one. Both can be used to calculate matter properties and produce close results. However, the continuous formula includes the smooth functions that can be plotted and examined. Thus, we can analyze the contributions of various parts of the electron spectrum to the obtained properties. The possibility of such analysis is the main advantage of the continuous formula. The continuous Kubo-Greenwood formula is implemented in the parallel code cubogram. Using the code we demonstrate the influence of technical parameters on the simulation results for liquid aluminum. We also analyze various methods of matrix elements computation and their effect on dynamic electrical conductivity.
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http://dx.doi.org/10.1103/PhysRevE.105.035307 | DOI Listing |
J Chem Phys
December 2024
Institut für Physik, Universität Rostock, D-18051 Rostock, Germany.
We investigate the first-order liquid-liquid phase transition in fluid hydrogen, which is accompanied by a nonmetal-to-metal transition. We use a combination of density functional theory for the electrons and molecular dynamics simulations for the ions. By employing the nonlocal Heyd-Scuseria-Ernzerhof exchange-correlation functional, we accurately determine the equation of state and the corresponding coexistence line.
View Article and Find Full Text PDFPhys Chem Chem Phys
May 2024
Institute of Optics and Atomic Physics, Technische Universität Berlin, 10623 Berlin, Germany.
Charge transport nonlinearities in semiconductor quantum dots and nanorods are studied. Using a density matrix formalism, we retrieve the field-dependent nonlinear mobility and show the possibility of intra-pulse gain. We further demonstrate that the dynamics of master equations can be captured in an analytical formula for the field-dependent charge carrier mobility, for two-level systems.
View Article and Find Full Text PDFPhys Rev E
November 2023
Joint Institute for High Temperatures, Izhorskaya 13 Building 2, Moscow 125412, Russia.
Substances with a complex electronic structure exhibit non-Drude optical properties that are challenging to interpret experimentally and theoretically. In our recent paper [Phys. Rev.
View Article and Find Full Text PDFJ Mol Graph Model
March 2024
Physics Department, Faculty of Science, Malayer University, Malayer, Iran.
Utilizing the Kubo-Greenwood formula, Tight Binding calculations were employed to examine the electronic and thermoelectric properties of hexagonal boron nitride (h-BN) with carbon impurity instead of boron, nitrogen and pairs boron-nitrogen. The electronic properties of the pristine monolayer BN are markedly impacted by the introduction of carbon dopants and its band gap reduction is directly correlated with the concentration of carbon impurities. The electronic properties of doped h-BN are influenced by the presence of a magnetic field, leading to subband separation and band gap narrowing, independent of the impurity types.
View Article and Find Full Text PDFJ Mol Graph Model
June 2023
Physics Department, Malayer University, Malayer, Iran. Electronic address:
In this paper, the Kubo-Greenwood formula based on the tight-binding model is used to investigate the effects of the bias voltage and magnetic field on the electrical conductivity and heat capacity of the trilayer BP and BN with energy-stable stacking structures. The results show that electronic and thermal properties of the selected structures can be significantly modified by external fields. The position and intensity of DOS peaks and the band gap of selected structures are affected by the external fields.
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